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ML9XX15 3019B AZ4558C APL5912 HER104PT TC0279A MAX5987A 2412W
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  t150c Datasheet PDF File

For t150c Found Datasheets File :: 6    Search Time::1.391ms    
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    ONSEMI[ON Semiconductor]
Part No. MGB15N35CLT4 MGP15N35CL MGC15N35CL
OCR Text ...L = 3 mH, Starting TJ = 150C t150c) Symbol EAS 300 150 Value Unit mJ THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-220 D2PAK Maximum Lead Temperature for Solde...
Description Internally Clamped N-Channel IGBT
File Size 99.24K  /  8 Page

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    ONSEMI[ON Semiconductor]
Part No. MGB15N40CLT4 MGP15N40CL MGC15N40CL
OCR Text ...L = 3 mH, Starting TJ = 150C t150c) Symbol EAS 300 150 Value Unit mJ THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-220 D2PAK Maximum Lead Temperature for Solde...
Description Internally Clamped N-Channel IGBT 15 A, 440 V, N-CHANNEL IGBT
File Size 99.61K  /  8 Page

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    MTP3N120E

Motorola, Inc.
Part No. MTP3N120E
OCR Text ....5 Apk, L = 10 mH, RG = 25 ) t150c) EAS 101 mJ THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 secon...
Description TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM
File Size 252.11K  /  8 Page

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    FC40SA50FKP

Vishay Siliconix
Part No. FC40SA50FKP
OCR Text ...5 4.5 v 2 0 s puls e width t150c i d , drain-to-source current (a) v ds , drain-to-source voltage (v ) 0.1 1 10 100 1000 4 5 6 7 8 9 10 11 12 v gs , gate-to-source voltage (v) i d , drain-to-source current (a) t j =150c t j =25c v ds =...
Description Power MOSFET, 40 A
File Size 191.68K  /  10 Page

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    MTP3N120E_D ON2600 MTP3N120E-D

ON Semiconductor
Part No. MTP3N120E_D ON2600 MTP3N120E-D
OCR Text ....5 Apk, L = 10 mH, RG = 25 ) t150c) EAS 101 mJ THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 secon...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
File Size 178.47K  /  8 Page

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For t150c Found Datasheets File :: 6    Search Time::1.391ms    
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