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  256m-word Datasheet PDF File

For 256m-word Found Datasheets File :: 222    Search Time::1.297ms    
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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text ...or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides ...word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 679.73K  /  42 Page

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    K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text ...or 16Mx16bit, the K9F56XXX0B is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the m...word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 601.33K  /  34 Page

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    K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text ...or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the m...word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device...
Description 32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata

File Size 653.97K  /  39 Page

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    HM5225165B HM5225165B-75 HM5225165B-A6 HM5225165B-B6 HM5225165BLTT-75 HM5225165BLTT-A6 HM5225165BLTT-B6 HM5225165BTT-75

ELPIDA[Elpida Memory]
Part No. HM5225165B HM5225165B-75 HM5225165B-A6 HM5225165B-B6 HM5225165BLTT-75 HM5225165BLTT-A6 HM5225165BLTT-B6 HM5225165BTT-75 HM5225165BTT-A6 HM5225165BTT-B6 HM5225405B-75 HM5225405B-A6 HM5225405B-B6 HM5225405BLTT-75 HM5225405BLTT-A6 HM5225405BLTT-B6 HM5225405BTT-75 HM5225405BTT-A6 HM5225405BTT-B6 HM5225805B-75 HM5225805B-A6 HM5225805B-B6 HM5225805BLTT-75 HM5225805BLTT-A6 HM5225805BLTT-B6 HM5225805BTT-75 HM5225805BTT-A6 HM5225805BTT-B6 HM5225405B
OCR Text 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword x 16-bit x 4-bank/8-Mword x 8-bit x 4-bank /16-Mword x 4-bit x 4-bank PC/133, PC/100 SDRA...word x 16-bit x 4 bank. The HM5225805B is a 256-Mbit SDRAM organized as 8388608-word x 8-bit x 4 ban...
Description 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133 PC/100 SDRAM
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM

File Size 445.93K  /  63 Page

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    HM5225325F-B60 HM5225645F HM5225645F-B60

http://
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. HM5225325F-B60 HM5225645F HM5225645F-B60
OCR Text 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM ADE-203-1014C (Z) Rev. 1.0 Oct. 1,...word x 64-bit x 4-bank. The Hitachi HM5225325F is a 256-Mbit SDRAM organized as 2097152-word x 32-bi...
Description 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM

File Size 76.58K  /  16 Page

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    K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M-P

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M-P
OCR Text 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V devic...Word - Block Erase -X8 device(K9K2G08X0M): (128K + 4K)Byte -X16 device(K9K2G16X0M): (64K + 2K)Word *...
Description 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

File Size 637.45K  /  40 Page

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    K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G16Q0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G16Q0M
OCR Text 256M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History 1. Initial issue 1. Add two-K9K4GXXU0M-YCB0/YIB0 Sta...Word - Block Erase -X8 device(K9XXG08XXM) : (128K + 4K)Byte -X16 device(K9XXG16XXM) : (64K + 2K)Word...
Description 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

File Size 597.69K  /  38 Page

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    K9F2G08Q0M K9F2G08U0M K9F2G16Q0M K9F2G16U0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2G08Q0M K9F2G08U0M K9F2G16Q0M K9F2G16U0M
OCR Text 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. Add the Rp vs tr ,tf &...Word - Block Erase -X8 device(K9F2G08X0M) : (128K + 4K)Byte -X16 device(K9F2G16X0M) : (64K + 2K)Word...
Description FLASH MEMORY

File Size 597.88K  /  38 Page

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