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131 072 Datasheet PDF File

For 131 072 Found Datasheets File :: 1893 Search Time::1.532ms
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				Maxim Integrated Products, Inc. Dallas Semiconducotr DALLAS[Dallas Semiconductor] MAXIM - Dallas Semiconductor
Part No.	DS1258Y DS1258Y-70-IND DS1258AB-100 DS1258AB-100-IND DS1258AB-70 DS1258AB-70-IND DS1258Y-100 DS1258Y-100-IND DS1258Y-70
OCR Text	... static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithiu...
Description	128k x 16 Nonvolatile SRAM 128K的16非易失SRAM Safety Sign; Legend:Notice Authorized Personnel Only; External Height:7"; External Width:10"; Body Material:Polyester; Color:Blue/Black RoHS Compliant: NA 128K的16非易失SRAM
File Size	171.73K / 8 Page	View it Online	Download Datasheet

				Adesto
Part No.	45DB161E
OCR Text	... sector 2 sector 15 = 256 pages 131,072/135,168 bytes block 2 sector 1 = 256 pages 131,072 /135,168 bytes sector 14 = 256 pages 131,072/135,168 bytes sector 2 = 256 pages 131,072/135,168 bytes 6 at45db161e 8782g?dflash?10/2013 4. dev...
Description	AT45DB161E
File Size	1,079.02K / 73 Page	View it Online	Download Datasheet

				ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
Part No.	AT25P1024C1-10CC AT25P1024C1-10CC-2.7 AT25P1024C1-10CI AT25P1024C1-10CI-1.8 AT25P1024C1-10CC-1.8 AT25P1024C1-10CI-2.7 AT25P1024W1-10SC-1.8 AT25P1024W1-10SI-1.8 AT25P1024W1-10SI-2.7 AT25P1024W1-10SC AT25P1024W1-10SC-2.7 AT25P1024W1-10SI AT25P1024
OCR Text	... * * SPI Serial EEPROMs 1M (131,072 x 8) * Description The AT25P1024 provides 1,048,576 bits of serial electrically erasable programmable read only memory (EEPROM) organized as 131,072 words of 8 bits each. The device is optimize...
Description	SPI Serial EEPROMs SPI Serial EEPROMs 128K X 8 SPI BUS SERIAL EEPROM, PDSO20
File Size	128.58K / 13 Page	View it Online	Download Datasheet

				Sharp Corporation Sharp Electrionic Components
Part No.	LH530800A-Y
OCR Text	131,072 words x 8 bit organization * Access times: 500 ns (MAX.) at 2.6 V VCC < 4.5 V 150 ns (MAX.) at 4.5 V VCC 5.5 V * Low-power consumption: Operating: 193 mW (MAX.) Standby: 550 W (MAX.) * Static operation * Three-state outputs * Mas...
Description	CMOS 1M (128K X 8) 3 V-DRIVE MROM
File Size	52.00K / 6 Page	View it Online	Download Datasheet

				INTEL[Intel Corporation]
Part No.	AB28F200BX-T90 AB28F200BX-B90 A28F200BX-T
OCR Text	...ized as either 262 144 bytes or 131 072 words of information They are offered in 44Lead plastic SOP packages The x8 x16 pinout conforms to the industry standard ROM EPROM pinout Read and Write Characteristics are guaranteed over the ambient...
Description	2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
File Size	448.99K / 33 Page	View it Online	Download Datasheet

				Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, Inc.
Part No.	BS616LV2020DI BS616LV2020DC BS616LV2020AC BS616LV2020 BS616LV2020AI
OCR Text	...ndom Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed...
Description	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable 非常低功电压CMOS SRAM28K的1656K × 8位开 LM4954 Boomer ® Audio Power Amplifier Series High Voltage 3 Watt Audio Power Amplifier; Package: MICRO SMD; No of Pins: 9 非常低功电压CMOS SRAM28K的1656K × 8位开
File Size	247.16K / 11 Page	View it Online	Download Datasheet

				BRILLIANCE SEMICONDUCTOR, Inc.
Part No.	BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
OCR Text	...ndom Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed...
Description	LM4961 Ceramic Speaker Driver; Package: LLP; No of Pins: 28 非常低功电压CMOS SRAM28K的1656K × 8位开 Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable 非常低功电压CMOS SRAM28K的1656K × 8位开
File Size	251.32K / 11 Page	View it Online	Download Datasheet

				BRILLIANCE SEMICONDUCTOR, Inc. BSI[Brilliance Semiconductor]
Part No.	BS616LV2023 BS616LV2023AC BS616LV2023AI BS616LV2023DC BS616LV2023DI
OCR Text	...ndom Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed...
Description	VERY LOW POWER/VOLTAGE CMOS SRAM 128K X 16 OR 256K X 8 BIT SWITCHABLE
File Size	246.43K / 11 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
Part No.	BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DI BS616UV2021AI10
OCR Text	...ndom Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed...
Description	10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
File Size	251.21K / 11 Page	View it Online	Download Datasheet

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