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MTE100 R1200F02 HFBR5112 380013 DR5000 44100 TA303 MC1453
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    ST Microelectronics
Part No. P4NB10 P4NB100
OCR Text ...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 3.8 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forwar...e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g ...
Description Search --To STP4NB100

File Size 139.43K  /  9 Page

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    ST Microelectronics
Part No. STB50NE08
OCR Text ...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 50 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =25 a 20 35 s c iss c oss c rss input capacitance out...
Description N-CHANNEL POWER MOSFET

File Size 288.51K  /  8 Page

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    ST Microelectronics
Part No. STW9NA60
OCR Text ...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 9a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward t...e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 1...
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

File Size 324.48K  /  10 Page

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    9NB50FP

STMicroelectronics
Part No. 9NB50FP
OCR Text ...ate drain current v ds >i d(on) xr ds(on)max, v gs =10v 8.6 a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 4.3 a 5.7 s c iss input capacitance v ds = 25v, f = 1 mhz...
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File Size 130.76K  /  9 Page

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    意法半导
Part No. W15NB50
OCR Text ...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 14.6 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =7.5a 8 12 s c iss c oss c rss input capacitance ou...
Description N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

File Size 97.66K  /  9 Page

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    ST Microelectronics
Part No. STB55NE06
OCR Text ...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 55 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =27.5 a 25 35 s c iss c oss c rss input capacitance o...
Description N-CHANNEL POWER MOSFET

File Size 292.07K  /  8 Page

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    ST Microelectronics
Part No. STH7NA80
OCR Text ...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 7a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward t...e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 1...
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

File Size 323.02K  /  10 Page

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    ST Microelectronics
Part No. STH7NA90FI
OCR Text ...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 7a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward t...e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 1...
Description N - CHANNEL POWER MOSFET

File Size 304.84K  /  9 Page

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    D10PF06

STMicroelectronics
Part No. D10PF06
OCR Text ...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 10 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward...e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.03...
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File Size 115.06K  /  8 Page

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    ST Microelectronics
Part No. STP6NB80 STP6NB80FP
OCR Text ...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 5.7 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forwar...e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g ...
Description N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP

File Size 222.26K  /  6 Page

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