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    G5RL-U1A-E

Omron Electronics LLC
Part No. G5RL-U1A-E
OCR Text ...max voltage power consumption (w) % of rated voltage 3 vdc 200 15 70% max. 70% max. 130% approx. 0.6 5 vdc 120 41.7 6 vdc 100 60 12 vdc 50 ...e 12vdc no. of relays: 5 pcs test conditions:shock is applied in x, y, and z directions three times...
Description    16 A High Switching Current, General-purpose Latching Relay

File Size 295.52K  /  5 Page

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    2SK2796STL-E 2SK2796 2SK2796L 2SK2796L-E 2SK2796S

Renesas Electronics Corporation
Part No. 2SK2796STL-E 2SK2796 2SK2796L 2SK2796L-E 2SK2796S
OCR Text ...-55 to +150 Unit V V A A A A mJ W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source br...e PDM PW T 0.03 0.0 1s h P ot D= PW T 0.01 10 100 1m 10 m 100...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 87.60K  /  9 Page

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    2SK3070STL-E 2SK3070L-E 2SK3070

Renesas Electronics Corporation
Part No. 2SK3070STL-E 2SK3070L-E 2SK3070
OCR Text ...-55 to +150 Unit V V A A A A mJ W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source le...e (T rati hot) c = on 25 Operation in C ) this area is PW 50 limited by RDS(on) 0 50 ...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 88.16K  /  9 Page

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    2SK3134STL-E 2SK3134L-E 2SK3134

Renesas Electronics Corporation
Part No. 2SK3134STL-E 2SK3134L-E 2SK3134
OCR Text ...-55 to +150 Unit V V A A A A mJ W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source le...e 1 s (T rati c = on hot ) 25 Operation in C ) Channel Dissipation Pch (W) Drain Current ID (A...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 87.99K  /  9 Page

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    2SK3135STL-E 2SK3135L-E

Renesas Electronics Corporation
Part No. 2SK3135STL-E 2SK3135L-E
OCR Text ...-55 to +150 Unit V V A A A A mJ W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source le...e sh (T rati ot c = on ) 25 C ) 10 0 s PW s 1 m = s 10 m 10 0 50 100 150 200 ...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 88.39K  /  9 Page

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    HAT1038R-EL-E HAT1038R HAT1038RJ HAT1038RJ-EL-E

Renesas Electronics Corporation
Part No. HAT1038R-EL-E HAT1038R HAT1038RJ HAT1038RJ-EL-E
OCR Text ...50 Unit V V A A A -- A -- mJ W W C C Note 4 Note 4 Pch Note 3 Pch Tch Tstg Note 2 PW 10 s, duty cycle 1% 1 Drive operati...e uls PDM PW T 1m 10 m 100 m 1 10 100 D= PW T 0.0001 10 100 1000 10000 Pul...
Description Silicon P Channel Power MOS FET High Speed Power Switching

File Size 95.76K  /  8 Page

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    PD57002-E PD57002S-E

STMicroelectronics
Part No. PD57002-E PD57002S-E
OCR Text ...4.75 165 -65 to +150 Unit V V A W C C 1.2 Thermal data Table 2. Symbol RthJC Thermal data Parameter Junction - case thermal resi...E, PD57002S-E 2 Electrical Characteristics TCASE = +25 oC 2.1 Static Table 3. Symbol ...
Description RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

File Size 322.10K  /  23 Page

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    LA4440J-K-E

ON Semiconductor
Part No. LA4440J-K-E
OCR Text w , f=1khz, rg=600 w , with 100 100 1.5mm 3 al fin, see specified test circuit. r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m t n e r r u c t n e c s e i u qo c c i 0 0 10 0 2a m n i a g e g a t l ...
Description    Power Amplifier

File Size 541.72K  /  12 Page

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    HAT1016R-EL-E HAT1016R

Renesas Electronics Corporation
Part No. HAT1016R-EL-E HAT1016R
OCR Text ...0 -55 to +150 Unit V V A A A W W C C Pch Note 3 Pch Tch Tstg Note 2 Notes: 1. PW 10 s, duty cycle 1% 2. 1 Drive operation: Whe...e uls 0.01 PDM PW T 1m 10 m 100 m 1 10 100 D= 0.001 1s ho PW T tp 0.0001 10 ...
Description Silicon P Channel Power MOSFET High Speed Power Switching

File Size 91.07K  /  8 Page

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    HAT1025R-EL-E HAT1025R

Renesas Electronics Corporation
Part No. HAT1025R-EL-E HAT1025R
OCR Text ...0 -55 to +150 Unit V V A A A W W C C Pch Note 3 Pch Tch Tstg Note 2 Notes: 1. PW 10 s, duty cycle 1% 2. 1 Drive operation: Whe...E HE bp Index mark 1 Z e 4 *3 bp xM c Terminal cross section (Ni/Pd/Au plating) ...
Description Silicon P Channel Power MOS FET High Speed Power Switching

File Size 91.28K  /  8 Page

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