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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S640432E-TC K4S640432E K4S640432E-L1H K4S640432E-L1L K4S640432E-L75
OCR Text	...se time Output fall time Symbol trh tfh trh tfh Condition Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Min 1.37 1.30 2.8 2.0 3.9 ...
Description	4M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
File Size	103.86K / 10 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640432D-TC_L80 K4S640432D K4S640432D-TC_L10 K4S640432D-TC_L1H K4S640432D-TC_L1L K4S640432D-TC_L75 K4S640432D-TC/L10 K4S640432D-TC/L1H K4S640432D-TC/L1L K4S640432D-TC/L75 K4S640432D-TC/L80
OCR Text	...se time Output fall time Symbol trh tfh trh tfh Condition Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Min 1.37 1.30 2.8 2.0 3.9 ...
Description	64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM米4位4银行同步DRAM LVTTL
File Size	127.05K / 10 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S281632M-TL80 K4S281632M K4S281632M-L10 K4S281632M-L1H K4S281632M-L1L K4S281632M-L80 K4S281632M-TC K4S281632M-TC_L10 K4S281632M-TC_L1H K4S281632M-TC_L1L K4S281632M-TC_L80 K4S281632M-TC10 K4S281632M-TC1H K4S281632M-TC1L K4S281632M-TC80 K4S281632M-TL K4S281632M-TL10 K4S281632M-TL1H K4S281632M-TL1L K4S281632M-TC/L80 K4S281632M-TC/L1L K4S281632M-TC/L1H K4S281632M-TC/L10
OCR Text	...se time Output fall time Symbol trh tfh trh tfh Condition Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Min 1.37 1.30 2.8 2.0 3.9 ...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	85.96K / 10 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4S280432A K4S280432A-TC_L10 K4S280432A-TC_L1H K4S280432A-TC_L1L
OCR Text	...se time Output fall time Symbol trh tfh trh tfh Condition Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Min 1.37 1.30 2.8 2.0 3.9 ...
Description	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
File Size	69.87K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S280832B-TL80 K4S280832B K4S280832B-TC10 K4S280832B-TC1H K4S280832B-TC1L K4S280832B-TC75 K4S280832B-TCL10 K4S280832B-TCL1H K4S280832B-TCL1L K4S280832B-TCL75 K4S280832B-TCL80 K4S280832B-TL10 K4S280832B-TL1H K4S280832B-TL1L K4S280832B-TL75 K4S280832B-TC80
OCR Text	...se time Output fall time Symbol trh tfh trh tfh Condition Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Min 1.37 1.30 2.8 2.0 3.9 ...
Description	4M x 8Bit x 4 Banks Sychronous DRAM 4米8位4银行Sychronous内存
File Size	120.23K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT-G8
OCR Text	...se time Output fall time Symbol trh tfh trh tfh Condition Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Min 1.37 1.30 2.8 2.0 3.9 ...
Description	64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
File Size	124.02K / 11 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4S641632E-TC75 K4S641632E K4S641632E-TC60
OCR Text	...se time Output fall time Symbol trh tfh trh tfh Condition Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Min 1.37 1.30 2.8 2.0 3.9 ...
Description	64Mbit SDRAM
File Size	86.26K / 10 Page	View it Online	Download Datasheet

				Vishay Intertechnology
Part No.	SIP41108
OCR Text	...on Delay td(off)H td(on)H trL L trh tfH VBOOT - VLX = 8 V LX = GND V, VDRV = 8 V VDRV = 12 V PVDD = VDRV PVDD = VDD 2.3 1.9 2.9 1.3 2.4 1.2 45 35 45 35 20 30 PVDD = VDRV PVDD = VDD PVDD = VDRV PVDD = VDD 65 65 30 30 15 20 ns 4.2 3.5 5.2 2.4...
Description	Half-Bridge N-Channel Programmable 1-A MOSFET Driver for DC/DC Conversion with Adjustable High Side
File Size	125.10K / 8 Page	View it Online	Download Datasheet

				Samsung Electronics Inc
Part No.	K4S281632F-TC75
OCR Text	...se time Output fall time Symbol trh tfh trh tfh Condition Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Measure in linear region : 1.2V ~ 1.8V Min 1.37 1.30 2.8 2.0 3.9 ...
Description	DRAM (Dynamic RAM) - Datasheet Reference
File Size	107.60K / 10 Page	View it Online	Download Datasheet

For trh Found Datasheets File :: 311 Search Time::1.828ms
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