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Vishay
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| Part No. |
MCN
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| OCR Text |
techno document number 68004 revision 12-feb-03 electrical specifications type: npo or x7r. npo capacitance range standard: 33pf - 3900pf, other values available. x7r capacitance range: 470pf - 0.1 f, other values available. features |
| Description |
Molded Sip, Molded Epoxy Case, Solderability per MIL-STD-202 Method 208E, Marking Resistance to Solvents per MIL-STD-202 Method 215
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| File Size |
274.00K /
1 Page |
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Silicon Storage Technology
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| Part No. |
SST34HF1621
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| OCR Text |
... d user da ta. the sup erflash techno lo gy provides fixed erase and pro - gram times, ind epen dent of th e numbe r o f erase/prog ra m cycles that have o ccurre d. there fore, the system software or h ardware doe s not have to b e mo ... |
| Description |
(SST34HF1621 / SST34HF1641) 16M-bit Concurrent SuperFlash SRAM Combo Memory
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| File Size |
834.40K /
32 Page |
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it Online |
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Vishay社区
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| Part No. |
015S-203
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| OCR Text |
techno www.vishay.com for technical questions, contact: sfer@vishay.com document number: 68017 30 revision: 22-sep-10 1/4" (6.35 mm) square wirewound trimmers applications wirewound trimmers are particularly useful in those applications... |
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| File Size |
77.08K /
3 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-FC16
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| OCR Text |
...i, idt, micron, nec and samsung techno logy. (or 19) (or 36) (or 36) (or 72)
- 3 - rev 2.0 dec. 2003 1mx36 & 2mx18 qdr tm ii b4 sram k7r323684m k7r321884m pin configurations (top view) k7r323684m(1mx36) notes : 1. * checked no... |
| Description |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
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| File Size |
197.54K /
18 Page |
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Infineon
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| Part No. |
BGA622
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| OCR Text |
...fice in germany or our infineon techno logies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your n ... |
| Description |
Silicon MMICs - SiGe Ultra Low Noise Amplifier G = 15dB, NF=1.1dB, 50Ohm, SOT343
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| File Size |
74.21K /
9 Page |
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Sharp Corporation
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| Part No. |
LH28F008SCT-L12
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| OCR Text |
...n etoxtm* nonvolatile flash techno wy w cmos process (p-type silicon substrate) n not designed or rated as radiation hardened sharp?s lh28f008sct-l12 flash memory with smartvoltage technology is a high-density, ... |
| Description |
Flash Memory
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| File Size |
3,052.51K /
49 Page |
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ST Microelectronics
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| Part No. |
2STA1962
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| OCR Text |
...ansistor for linear amplifier) techno logy. the resulting transistor shows good gain linearity behaviour. figure 1. internal schematic diagram to-3p 1 2 3 table 1. device summary order code marking package packaging 2sta1962 2sta1962 to-... |
| Description |
High power PNP epitaxial planar bipolar transistor
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| File Size |
133.41K /
8 Page |
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it Online |
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