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  rad-.25 Datasheet PDF File

For rad-.25 Found Datasheets File :: 2836    Search Time::1.281ms    
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    FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3
OCR Text ... 0.053 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SE...25 250 100 200 -2.74 0.053 0.083 50 75 100 50 410 250 17 66 120 0.6 UNITS V V V V A A nA nA V ns n...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSL214R4 FSL214 FSL214D FSL214D1 FSL214D3 FSL214R FSL214R1 FSL214R3
OCR Text ...= 2.30 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SE...25 250 100 200 3.62 VGS = 0V to 20V VGS = 0V to 12V VGS = 0V to 2V VDD = 125V, ID = 1.5A ID = 1.5A, ...
Description PATCH PANEL HINGE KIT 4U SCA-H
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 1.5 A, 250 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

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    IRHM7460SE

IRF[International Rectifier]
Part No. IRHM7460SE
OCR Text ...EL SINGLE EVENT EFFECT (SEE) RAD HARD 500 Volt, 0.32, (SEE) RAD HARD HEXFET International Rectifier's (SEE) RAD HARD technology HEXFETs...25 3.5 -55 to 150 Pre-Radiation IRHM7460SE Units A W W/K V mJ A mJ V/ns oC 300 (0.063 in. ...
Description TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)

File Size 99.74K  /  4 Page

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    Aeroflex, Inc.
Part No. UT28F64T-45UPA UT28F64T-35UPA UT28F64T-45UCC UT28F64T-35UCC UT28F64T-35PPA
OCR Text ... standby: 500 m a maximum (post-rad) q radiation-hardened process and design; total dose irradiation testing to mil-std-883, method 1019 - total dose: 1e6 rad(si) - let th (0.25) ~ 100 mev-cm 2 /mg - sel immune > 128 mev-...
Description x8 PROM x8胎膜早破

File Size 88.39K  /  10 Page

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    Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Part No. M5M44405CTP-6S M5M44405CJ-5S
OCR Text ... t rcd t rcd(max) and t rad t rad(max) . if t rcd or t rad is greater than the maximum recommended value shown in this ta...25 28 50 15 13 35 38 70 20 5 5 15 13 ns ns 13 15 ns 5 20 20 ns 15 13 20 m5m44405c-5,-5s m5m44405c-6,...
Description EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM 江户(超页模式)4194304位(1048576 - Word位)动态随机存储器

File Size 248.23K  /  27 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSL13A0R4 FSL13A0D FSL13A0D1 FSL13A0D3 FSL13A0R FSL13A0R1 FSL13A0R3
OCR Text Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened ...25 10 0.20 27 9 27 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC CAUTION: Stresses above...
Description 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
9A/ 100V/ 0.180 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

File Size 70.80K  /  8 Page

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    HS1-1840ARH HS1-1840BRH 5962F9563002QYC 5962F9563002VXC 5962F9563004V9A 5962F9563004VXC 5962F9563004VYC HS9-1840ARH HS9-

Intersil Corporation
http://
Part No. HS1-1840ARH HS1-1840BRH 5962F9563002QYC 5962F9563002VXC 5962F9563004V9A 5962F9563004VXC 5962F9563004VYC HS9-1840ARH HS9-1840BRH HS-1840AEH HS-1840ARH11 5962F9563002QXC
OCR Text rad-hard 16 channel cmos analog multiplexer with high-z analog input protection hs-1840arh, hs-1840aeh, hs-1840brh thehs-1840arh, hs-1840...25 24 23 22 21 20 19 18 17 16 15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 1 2 3 4 5 6 7 8 9 10 11 12 13 14 2...
Description Rad-Hard 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection
   Rad-Hard 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSJ9260R4 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1 FSJ9260R3 FN4466
OCR Text Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a seri...25 250 100 200 -3.86 0.130 0.241 50 35 130 30 420 260 20 64 90 0.65 40 UNITS V V V V A A nA nA V n...
Description 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 27 A, 200 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
27A/ -200V/ 0.130 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
From old datasheet system

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM5116800C-XXTS-K MSM5116800C-XXTS-L MSM5116800C-50TS-K
OCR Text ... rasp t rsh t cas t csh t rcd t rad t crp t asr t rah t asc t cah t ral t rcs t rch t rrh t oea t oez t ref t roh t rhcp output low impedanc...25 0 0 0 0 13 30 max. 50 13 25 30 13 50 10,000 100,000 10,000 37 25 13 13 64 m...
Description 2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 2097152字8位动态随机存储器:快速页面模式型

File Size 449.76K  /  16 Page

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