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For parameter Found Datasheets File :: 344651 Search Time::7.203ms
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				PANASONIC[Panasonic Semiconductor]
Part No.	2SB642
OCR Text	... s Absolute Maximum Ratings parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VC...
Description	Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type)
File Size	49.24K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB709A 2SD601A
OCR Text	... s Electrical Characteristics parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Co...
Description	Silicon PNP epitaxial planer type
File Size	47.56K / 3 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	NX3008PBKMB
OCR Text	... 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j =25c ---30v v gs gate-source voltage -8 - 8 v i d drain current v gs =-4.5v; t amb =25c [1] ---300ma static characteristics r dson drain-sou...
Description	30 V, single P-channel Trench MOSFET
File Size	1,060.45K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	NX3008NBKV NX3008NBKV-15
OCR Text	... 1. quick reference data symbol parameter conditions min typ max unit per transistor v ds drain-source voltage t j =25c --30v v gs gate-source voltage -8 - 8 v i d drain current v gs =4.5v; t amb =25c [1] --400ma static characteristics (per...
Description	30 V, 400 mA dual N-channel Trench MOSFET
File Size	840.73K / 17 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	NX3008NBKMB NX3008NBKMB-15
OCR Text	... 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j =25c --30v v gs gate-source voltage -8 - 8 v i d drain current v gs =4.5v; t amb =25c [1] - - 530 ma static characteristics r dson drain-sou...
Description	30 V, single N-channel Trench MOSFET
File Size	1,056.51K / 15 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTMFS4C05NT1G NTMFS4C05NT3G
OCR Text	... 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss 30 v gate ? to ? source voltage v gs 20 v continuous drain current r ja (note 1) steady state t a = 25 c i d 21.7 a t a = 80 c 16.3 power d...
Description	Power MOSFET 30 V, 78 A, Single N?Channel, SO? FL
File Size	119.08K / 7 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTMFS4983NFT1G NTMFS4983NFT3G
OCR Text	... 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss 30 v gate ? to ? source voltage v gs 20 v continuous drain current r ja (note 1) steady state t a = 25 c i d 30 a t a = 85 c 22 power dissi...
Description	Power MOSFET 30 V, 106 A, Single N?Channel, SO? FL
File Size	116.27K / 7 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTMFS4934NT1G NTMFS4934NT3G
OCR Text	... 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss 30 v gate ? to ? source voltage v gs 20 v continuous drain current r ja (note 1) steady state t a = 25 c i d 29.1 a t a = 100 c 18.4 power ...
Description	Power MOSFET 30 V, 147 A, Single N?Channel, SO? FL
File Size	116.36K / 7 Page	View it Online	Download Datasheet

For parameter Found Datasheets File :: 344651 Search Time::7.203ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |