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793A022 PC111L 5HN02N 2505H 5M100P TM9323 181KZF Z86E33
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  ma mb Datasheet PDF File

For ma mb Found Datasheets File :: 7623    Search Time::2.671ms    
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    Elite Semiconductor Memory Technology
Part No. M24L216128DA
OCR Text ...v ? typical active current: 1 ma @ f = 1 mhz ? low standby power ? automatic power-down when deselected ...mb, 8-mb, 16-mb, and 32-mb densities respectively. 3. nc ?no connect??not connect ed internally to ...
Description 2-mbit (128K x 16) Pseudo Static RAM

File Size 377.83K  /  14 Page

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    PSMN3R5-30LL PSMN3R5-30LL11

NXP Semiconductors
Part No. PSMN3R5-30LL PSMN3R5-30LL11
OCR Text ...ce breakdown voltage i d = 0.25 ma; v gs =0v; t j = -55 c 27 - - v i d = 0.25 ma; v gs =0v; t j =25c30--v v gs(th) gate-source threshold voltage i d =1ma; v ds =v gs ; t j =150c; see figure 10 0.5--v i d =1ma; v ds =v gs ; t j =25c; see ...
Description N-channel DFN3333-8 30 V 3.6 mΩ logic level MOSFET

File Size 350.06K  /  15 Page

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    BT137B-500 BT137B-500G BT137B-500F

Philips Semiconductors
NXP Semiconductors N.V.
Part No. BT137B-500 BT137B-500G BT137B-500F
OCR Text ... t = 0.1 a t2+ g+ - 5 35 25 50 ma t2+ g- - 8 35 25 50 ma t2- g- - 11 35 25 50 ma t2- g+ - 30 70 70 100 ma i l latching current v d = 12 v;...mb . fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, ...
Description Triacs(双向可控 500 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263

File Size 52.86K  /  6 Page

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    PSMN7R0-30YL

NXP Semiconductors
Part No. PSMN7R0-30YL
OCR Text ...A; VGS = 0 V; Tj = -55 C ID = 1 ma; VDS = VGS; Tj = 25 C; see Figure 10; see Figure 11 ID = 1 ma; VDS = VGS; Tj = 150 C; see Figure 10 ID = 1 ma; VDS = VGS; Tj = -55 C; see Figure 10 IDSS IGSS RDSon drain leakage current gate leakage curren...
Description N-channel TrenchMOS logic level FET

File Size 185.37K  /  13 Page

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    BUK7610-100B

NXP Semiconductors N.V.
Part No. BUK7610-100B
OCR Text ...ld voltage Conditions ID = 0.25 ma; VGS = 0 V; Tj = 25 C ID = 0.25 ma; VGS = 0 V; Tj = -55 C ID = 1 ma; VDS = VGS; Tj = 175 C; see Figure 10 ID = 1 ma; VDS = VGS; Tj = 25 C; see Figure 10 ID = 1 ma; VDS = VGS; Tj = -55 C; see Figure 10 IDSS...
Description N-channel TrenchMOS standard level FET

File Size 373.96K  /  14 Page

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    BUK866-400IZ

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BUK866-400IZ
OCR Text ...v (br)cg collector-gate zener 2 ma -i g 5 ma; -40 t j 150?c 370 410 500 v breakdown voltage v (br)ec reverse collector-emitter ...mb = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v (cl)cer col...
Description Insulated Gate Bipolar Transistor Protected Logic-Level IGBT(带逻辑电平保护的绝缘栅双极型晶体管IGBT
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT(带逻辑电平保护的绝缘栅双极型晶体管(IGBT

File Size 92.22K  /  8 Page

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    Atmel Corp.
Part No. AT43301-SC AT43301-SU
OCR Text ...ub is allowed to draw up to 500 ma of power from the host or upstream hub. the at43301?s itself and its external circuitry typically consume...mb/s t frame frame interval (1) 0.9995 1.0005 ms t rfi consecutive frame interval jitter (1) no cloc...
Description Low-cost USB Hub Controller

File Size 198.52K  /  27 Page

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    TODX270

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TODX270
OCR Text ...20 -1 260 (Note 1) Unit C C V V ma ma C Note 1: Soldering time 3 s (More than 1 mm apart from the package). Handling precaution: The LED...mb / s, Using PCF DC to 6 mb / s, Using PCF R=0 -18 2.0 4.6 Typ. 800 85 max 6 100...
Description CONNECTOR ACCESSORY
FIBER OPTIC TRANSCEIVING MODULE FOR DUPLEX DIGITAL SIGNAL COMMUNICATION

File Size 170.27K  /  9 Page

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    聚兴科技股份有限公司
Part No. AT43301-SC AT43301-SU
OCR Text ...ub is allowed to draw up to 500 ma of power from the host or upstream hub. the at43301?s itself and its external circuitry typically consume...mb/s t frame frame interval (1) 0.9995 1.0005 ms t rfi consecutive frame interval jitter (1) no cloc...
Description
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    BUK9506-55B

NXP Semiconductors
Part No. BUK9506-55B
OCR Text ... A; VGS = 0 V; Tj = 25 C ID = 1 ma; VDS = VGS; Tj = -55 C; see Figure 9 and 10 ID = 1 ma; VDS = VGS; Tj = 25 C; see Figure 9 and 10 ID = 1 ma; VDS = VGS; Tj = 175 C; see Figure 9 and 10 IDSS IGSS RDSon drain leakage current gate leakage cur...
Description N-channel TrenchMOS FET

File Size 181.28K  /  13 Page

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For ma mb Found Datasheets File :: 7623    Search Time::2.671ms    
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