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Hynix Semiconductor
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| Part No. |
HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 HY51VS65163HGJ-6 HY51VS65163HGLJ-45 HY51VS65163HGLJ-6 HY51VS65163HGLJ-5 HY51VS65163HGLT-45 HY51VS65163HGLT-5 HY51VS65163HGT-45 HY51VS65163HGLT-6 HY51VS65163HGT-5 HY51VS65163HGT-6
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| OCR Text |
.../ras row address strobe /ucas, /lcas column address strobe /we write enable /oe output enable a0-a11 address inputs a0-a11 refresh address inputs i/o 0- i/o15 data input / output vcc power (3.3v) vss ground nc no connection pin description ... |
| Description |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
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| File Size |
97.47K /
11 Page |
 View
it Online |
Download Datasheet
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| Part No. |
K4E151611D-JL50 K4E151612D-TL50
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| OCR Text |
... lower data out buffer ras ucas lcas w vcc vss dq0 to dq7 a0-a11 (a0 - a9) *1 a0 - a7 (a0 - a9) *1 memory array 1,048,576 x16 cells samsung electronics co., ltd. reserves the right to change products and specifications without notice. 1m x... |
| Description |
1M X 16 EDO DRAM, 50 ns, PDSO42
1M X 16 EDO DRAM, 50 ns, PDSO44
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| File Size |
404.63K /
35 Page |
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it Online |
Download Datasheet |
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