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CHENYI[Shanghai Lunsure Electronic Tech]
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| Part No. |
1N4007G 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G
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| OCR Text |
...0V DC 2.Thermal resistance from juntion to ambient and from junction lead at 0.375"(9.5mm)lead length, P.C.B. Mounted
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2
CE
CHENYI ELECTRONICS
1N4001G THRU 1N4007G
... |
| Description |
(1N4001G - 1N4007G) GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
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| File Size |
139.29K /
2 Page |
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Shanghai Lunsure Electr...
Chenyi Electronics
CHENYI[Shanghai Lunsure Electronic Tech]
涓?捣???绉????????
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| Part No. |
1N5399 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398
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| OCR Text |
...0V DC 2.Thermal resistance from juntion to ambient and from junction lead at 0.375"(9.5mm)lead length, P.C.B. Mounted
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2
CE
CHENYI ELECTRONICS
1N5391 THRU 1N5399
GE... |
| Description |
GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5Amperes
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| File Size |
139.61K /
2 Page |
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it Online |
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Shanghai LUNSURE Electronic Technology Co., Ltd.
CHENYI[Shanghai Lunsure Electronic Tech]
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| Part No. |
1N5408 1N5400 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407
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| OCR Text |
...DC
2.Thermal resistance from juntion to ambient and from junction lead at 0.375"(9.5mm)lead length, P.C.B. Mounted
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2
CE
CHENYI ELECTRONICS
1N5400 THRU 1N5408
GE... |
| Description |
GENERAL PURPOSE PLASTIC RECTIFIER 通用树脂整流
GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts. Forward Current - 3.0Amperes
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| File Size |
158.06K /
2 Page |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
BAT54SWT1G BAT54CWT1G
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| OCR Text |
... Reverse Bias Voltage
20 18
juntion Capacitance, CJ[pF]
15 13 10 8 5 3 0
0
2
4
6
8
10
Reverse Voltage, VR[V]
BAT54SWT1G/BAT54CWT1G Rev. A
2
www.fairchildsemi.com
BAT54SWT1G/BAT54CWT1G Schottky Diodes
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| Description |
Schottky Barrier diode
Schottky Diodes 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
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| File Size |
86.86K /
3 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
BAV99WT1G
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| OCR Text |
...ower Derating Curve
F(AV)
juntion Capacitance, CJ[pF]
1.78
[A]
0.20
1.75
Average Forward Current, I
0.15
1.73
0.10
1.70
1.68
0.05
1.65
0.00
0
2
4
6
8
10
0
25
50
75
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| Description |
Small Signal Diode
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| File Size |
85.93K /
3 Page |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
BUY82
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| OCR Text |
...ance to case Thermal resistance juntion to ambient Max Max 5.0C/W 150C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)
Parameter
h21E VCE(SAT) VBE(SAT) ICBO IEBO ton toff C22b C11b fT Static value of common-emitter f... |
| Description |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN HERMETICALLY SEALED METAL CASE
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| File Size |
48.70K /
2 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDP4020P_00 FDB4020P FDP4020P FDP4020P00
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| OCR Text |
...Notes: 1. RJA is the sum of the juntion-to-case and case-to-ambient thermal resistance.For T0-263 the device is mounted on circuit board with a 1in2 pad of 2 oz. copper. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
FDP4020P Rev. B... |
| Description |
P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
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| File Size |
72.79K /
5 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDR838P
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| OCR Text |
...
1
2
3
4
5
TJ, juntion TEMPERATUR ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
50 VDS=-5V -ID, DRAIN CURRENT (A) 40 25 C 30
o
Figure 4: On-Resistance Variation with Ga... |
| Description |
P-Channel 2.5V Specified PowerTrenchTM MOSFET
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| File Size |
203.14K /
8 Page |
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it Online |
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