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  in. 660 Datasheet PDF File

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    AM50-0015 AM50-0015SMB AM50-0015TR AM50-0015TR3000

MA-Com
MACOM[Tyco Electronics]
Part No. AM50-0015 AM50-0015SMB AM50-0015TR AM50-0015TR3000
OCR Text ... stage is a GaAs MMIC amplifier in a low-cost miniature SOT-363 surface mount plastic package. The AM50-0015 employs a monolithic 1-stage se...660.000 764.000 868.000 972.000 1076.000 1180.000 1284.000 1388.000 1492.000 1596.000 1700.000 1804....
Description 200-3000 MHz, miniature broadband gain stage
Miniature Broadband Gain Stage 200 - 3000 MHz

File Size 114.73K  /  7 Page

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    AN618 AN6182 AN6182K AN6182S

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. AN618 AN6182 AN6182K AN6182S
OCR Text ...or (10 to 470k) and a capacitor in parallel to the ground. The resistance determines the sensitivity of VOX detection. Internal reference su...660 pF EQ OUT 16 15 14 13 24 23 22 21 PRE VCC ALC ALC ALC DET REC MIC Lin...
Description Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Recording and playing amplifier IC for answering telephones

File Size 59.63K  /  6 Page

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    APT5010JN APT5012JN APT5012

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT5010JN APT5012JN APT5012
OCR Text ...H Volts 3 5 2500 35 13 pF in-lbs 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3...
Description POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET

File Size 60.42K  /  4 Page

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    APT5024AVR

ADPOW[Advanced Power Technology]
Part No. APT5024AVR
OCR Text ... 050-5802 Rev B Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,43...
Description POWER MOS V 500V 18.5A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.55K  /  4 Page

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    APT5024BVFR

Advanced Power Technology Ltd.
Part No. APT5024BVFR
OCR Text ....215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,33...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 22A 0.240 Ohm

File Size 61.69K  /  4 Page

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    APT5024BVR

ADPOW[Advanced Power Technology]
Part No. APT5024BVR
OCR Text ....215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,33...
Description POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.21K  /  4 Page

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    APT5026HVR

ADPOW[Advanced Power Technology]
Part No. APT5026HVR
OCR Text ... 050-5820 Rev B Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,33...
Description POWER MOS V 500V 18.5A 0.260 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.64K  /  4 Page

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    ATF-21186 ATF-21186-STR ATF-21186-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text ... field effect transistor housed in a surface mount plastic package. This general purpose device is designed for use in low noise amplifiers,...660 139 4.76 1.730 11 5.5 0.685 124 3.78 1.545 0 6.0 0.712 112 2.80 1.380 -11 6.5 0.739 102 1.86 1.2...
Description 0.5-6 GHz General Purpose Gallium Arsenide FET

File Size 67.13K  /  8 Page

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    BC847A-7 BC847AT BC847B-7 BC847C-7 BC847BT BC847CT BC847A BC847B BC847C

Diodes Inc.
DIODES[Diodes Incorporated]
Part No. BC847A-7 BC847AT BC847B-7 BC847C-7 BC847BT BC847CT BC847A BC847B BC847C
OCR Text ...N 0.45 0.65 0.50 All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu...660 -- -- -- -- -- Max -- -- -- 220 450 800 250 600 -- 700 770 15 5.0 -- 4.5 10 4.0 Unit Test Condit...
Description High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer 24-SOIC -55 to 125
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

File Size 56.50K  /  3 Page

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    BC847ALT1 BC847BLT1 BC847CLT1 BC848BLT1 BC850CLT1 BC849BLT1 BC846BLT1 BC850BLT1 BC848CLT1 BC849CLT1 BC848ALT1 BC849ALT1

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
Part No. BC847ALT1 BC847BLT1 BC847CLT1 BC848BLT1 BC850CLT1 BC849BLT1 BC846BLT1 BC850BLT1 BC848CLT1 BC849CLT1 BC848ALT1 BC849ALT1 BC850ALT1 BC846ALT1 BC846ALT1-D BC846ALT1_D BC847CLT1THRUBC850CLT1 BC846ALT1D BC846ALT1/D
OCR Text ...C) 1. FR-5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company. ...660 -- -- -- -- 220 450 800 0.25 0.6 -- -- 700 770 V V mV -- (IC = 2.0 mA, VCE = 5.0 V) Collec...
Description CASE 318-08 STYLE 6 SOT-23 (TO-236AB)
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
CASE 318-08/ STYLE 6 SOT-23 (TO-236AB)
CIR 4C 4#0 FR PIN PLUG
High Speed CMOS Logic Triple 3-Input NOR Gates 14-PDIP -55 to 125 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN Silicon General Purpose Transistors NPN硅通用晶体
High Speed CMOS Logic Dual Monostable Multivibrators with Reset 16-SOIC -55 to 125 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

File Size 220.44K  /  6 Page

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