implanted pdf Datasheet P9 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : KL197T02 HMC346 BAT54S PL62Z 45DB32 68HC705 LM741C FR305
	Product Description
	Full Text Search

implanted Datasheet PDF File

For implanted Found Datasheets File :: 6845 Search Time::1.781ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				Infineon Technologies AG
Part No.	HYS64D16020GD HYS64D16020GDL-7-A HYS64D16020GDL-8-A
OCR Text	...rt device or are intended to be implanted in the human body, that device orand/or maintain and support devices or systems system, or to affect the safety or effectiveness of or to support system. Life support devices and/or protect human li...
Description	DDR SDRAM Modules - 128MB (16Mx64) PC2100 2-bank Unbuffered DDR SDRAM SO Modules
File Size	495.07K / 22 Page	View it Online	Download Datasheet

				BOURNS[Bourns Electronic Solutions]
Part No.	TISP3240F3DR-S TISP3240F3SL-S TISP3260F3SL TISP3260F3SL-S TISP3XXXF3 TISP3240F3DR TISP3240F3SL TISP3260F3DR TISP3290F3DR TISP3290F3DR-S TISP3290F3SL TISP3290F3SL-S TISP3320F3DR TISP3320F3DR-S TISP3320F3SL TISP3320F3SL-S TISP3380F3DR TISP3380F3DR-S TISP3380F3SL TISP3380F3SL-S
OCR Text	...ervoltage Protector Series Ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `3240F3 `3260F3 `3290F3 `3320F3 `3380F3 VDRM V 180 200 220 240 270 V(BO) V 240 260 290 320 380 D Package (Top...
Description	HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
File Size	499.34K / 12 Page	View it Online	Download Datasheet

				Bourns Electronic Solut... BOURNS[Bourns Electronic Solutions]
Part No.	TISP3125H3 TISP3080H3 TISP3145H3 TISP3290H3 TISP3135H3 TISP3115H3 TISP3350H3 TISP3070H3 TISP3095H3 TISP3180H3 TISP3210H3 TISP3250H3
OCR Text	... . 8 kV 10/700, 200 A 5/310 Ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge SL Package (Top View) T G R 1 2 3 MDXXAGA Device `3070 `3080 `3095 `3115 `3125 `3135 `3145 `3180 `3210 `325...
Description	DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
File Size	558.74K / 12 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola Inc] Motorola, Inc
Part No.	MHW5382 MHW5382A
OCR Text	...CATV applications. Features ion-implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization system. * Specified for 53- and 60-Channel Performance * Broadband Power Gain @ f = 40 - 450 MHz Gp = 38 dB (Typ) * Broadba...
Description	450 MHz CATV Amplifier
File Size	62.17K / 4 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MHW5222A
OCR Text	...rket requirements. Features ion-implanted arsenic emitter transistors with 7.0 GHz fT, and an all gold metallization system. * Broadband Power Gain @ f = 40 - 450 MHz Gp = 22 dB (Typ) * Broadband Noise Figure @ f = 40 - 450 MHz NF = 4.5 d...
Description	450 MHz CATV Amplifier
File Size	61.68K / 4 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MRF650
OCR Text	...roadband Operation * Triple Ion implanted for More Consistent Characteristics * implanted Emitter Ballast Resistors * Silicon Nitride Passivated * 100% Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 15.5 Vdc, 2.0 dB Ov...
Description	RF POWER TRANSISTOR NPN SILICON
File Size	152.48K / 6 Page	View it Online	Download Datasheet

				http:// MOTOROLA[Motorola Inc] Motorola, Inc
Part No.	MHW6182-6
OCR Text	...CATV applications. Features ion-implanted arsenic emitter transistors with 7 GHz fT and an all gold metallization system. * Specified for 87-Channel Performance * Broadband Power Gain -- @ f = 40- 600 MHz Gp = 17.6 dB (Min) @ 50 MHz Gp = 18...
Description	600 MHz CATV Amplifier Module
File Size	59.84K / 2 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	HYS72D64500GR-7-B HYS72D64500GR-7F-B HYS72D64500GR-8-B HYS72D128520GR-7-B HYS72D128520GR-7F-B HYS72D128521GR-7-B HYS72D128521GR-7F-B HYS72D128521GR-8-B HYS72D32500GR HYS72D32500GR-7-B HYS72D32500GR-8-B
OCR Text	...rt device or are intended to be implanted in the human body, that device orand/or maintain and support devices or systems system, or to affect the safety or effectiveness of or to support system. Life support devices and/or protect human li...
Description	Registered DDR SDRAM-Modules
File Size	675.60K / 39 Page	View it Online	Download Datasheet

				POINN[Power Innovations Ltd] Power Innovations Limited
Part No.	TISP3150F3 TISP3125F3 TISP3180F3
OCR Text	... SECONDARY PROTECTION q Ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `3125F3 `3150F3 `3180F3 VDRM V 100 120 145 V(BO) V 125 150 180 D PACKAGE (TOP VIEW) T NC NC R 1 2 3 4 ...
Description	DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
File Size	450.28K / 17 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MHW5342A
OCR Text	...CATV applications. Features ion-implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization system. * Specified for 53- and 60-Channel Performance * Broadband Power Gain @ f = 40 - 450 MHz Gp = 34.5 dB Typ @ 50 MHz ...
Description	450 MHz CATV Amplifier
File Size	63.16K / 4 Page	View it Online	Download Datasheet

For implanted Found Datasheets File :: 6845 Search Time::1.781ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |