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				IRF[International Rectifier]
Part No.	IRF9Z24N IRF9Z24NPBF
OCR Text	...g TJ = 25C, L = 3.7mH RG = 25, ias = -7.2A. (See Figure 12) Pulse width 300s; duty cycle 2%. IRF9Z24N 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP 2 0 s PU LS E W ID TH Tc = 2 5C J 100 -ID ...
Description	-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text	...ng TJ = 25C, L = 1.3mH RG = 25, ias = -18A. (See Figure 12) Pulse width 300s; duty cycle 2%. Uses IRF9Z34 data and test conditions I SD -18A, di/dt 170A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
File Size	330.76K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9Z34N IRF9Z34NPBF
OCR Text	...g TJ = 25C, L = 3.6mH RG = 25, ias = -10A. (See Figure 12) Pulse width 300s; duty cycle 2%. IRF9Z34N 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP 100 -ID , D ra in -to -S o u rce C u rre n t (...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.35K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ448
OCR Text	... 10 s, Duty Cycle 1 % Tch Tstg ias EAS 30 2.0 150 -4.0 80 1. Gate 2. Drain 3. Source -55 to +150 C A mJ MP-45F(ISOLATED TO-220) Drain ** Starting Tch = 25 C, RG = 25 , VGS = -20 V 0 Gate Body Diode Gate Protection...
Description	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	117.41K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ449 2SJ449JM
OCR Text	... 10 s, Duty Cycle 1 % Tch Tstg ias EAS 35 2.0 150 -6.0 180 -55 to +150 C 123 1. Gate 2. Drain 3. Source MP-45F(ISOLATED TO-220) Drain ** Starting Tch = 25 C, RG = 25 , VGS = -20 V 0 Gate Body Diode Source Docu...
Description	Pch vertical DMOS FET MP-45F SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	116.80K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text	....5 70 150 -55 to +150 -20 40 ias EAS Notes 1. f = 20 kHz, Duty Cycle 10% (+Side) 2. PW 10 s, Duty Cycle 1 % 3. Starting Tch = 25 C, RA = 25 , VGS = -20 V 0 THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	70.31K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ493 D11265EJ3V0DS00
OCR Text	...2.0 150 -55 to +150 -16 25.6 ias EAS Notes 1. f = 20 kHz, Duty Cycle 10% (+Side) 2. PW 10 s, Duty Cycle 1 % 3. Starting Tch = 25 C, RA = 25 , VGS = -20 V 0 THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	64.87K / 8 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SK2383
OCR Text	...ithout heat sink (PD=3W) 100 ias L-load TC=25C Non repetitive pulse TC=25C Drain current ID (A) 10 DC 1ms 1 80 (1) 60 Avalanche current ias (A) ID t=100s 100 30 10 170mJ 3 10ms 100ms 40 1 0...
Description	Silicon N-Channel Power F-MOS FET
File Size	42.68K / 3 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z
OCR Text	...ngle Avalanche Energy Note2 ias EAS Note2 Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V The information in this document is subject to change without notice. Before using this d...
Description	Switching N-channel power MOS FET industrial use N沟道开关功率场效应晶体工业 From old datasheet system N-ch Power MOS FET
File Size	76.83K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FCB20N60 FCB20N60TM
OCR Text	...maximum junction temperature 2. ias = 20A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 20A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature ...
Description	600V N-Channel SuperFET 600V N-Channel MOSFET
File Size	611.95K / 8 Page	View it Online	Download Datasheet

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