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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM466F404BS2
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| OCR Text |
... range speed t rac t cac t rc t hpc -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns pin configurations pin 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 front v ss dq0 dq1 dq2 dq3 v cc dq4 dq5 dq6 dq7 v ss cas0 cas1 v cc... |
| Description |
4M x 64 DRAM SODIMM(4M x 64 ?ㄦ?RAM妯″?)
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| File Size |
403.70K /
21 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM5364005CSWG
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| OCR Text |
... range speed t rac t cac t rc t hpc -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns pin names pin name function a0 - a11 address inputs dq0 - 35 data in/out w read/write enable ras0 , ras2 row address strobe cas0 - cas3 column address str... |
| Description |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
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| File Size |
417.45K /
21 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM5364005BSWG
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| OCR Text |
... range speed t rac t cac t rc t hpc -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns pin names pin name function a0 - a11 address inputs dq0 - 35 data in/out w read/write enable ras0 , ras2 row address strobe cas0 - cas3 column address str... |
| Description |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
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| File Size |
389.50K /
19 Page |
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it Online |
Download Datasheet |
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NEC Corp.
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| Part No. |
MC-42S8LFF64S
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| OCR Text |
... 2, 5 (hyper page mode (edo)) t hpc = t hpc (min.) , i o = 0 ma t rac = 60 ns 760 /cas before /ras i cc5 /ras cycling t rac = 50 ns 1,080 ma 1, 2 refresh current t rc = t rc (min.) , i o = 0 ma t rac = 60 ns 920 /cas before /ras i cc... |
| Description |
3.3 V Operation 16M-Word By 65-Bit Dynamic RAM Module(工作电压3.4V的DRAM模块)
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| File Size |
278.00K /
32 Page |
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it Online |
Download Datasheet |
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NEC Corp.
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| Part No. |
MC-428LFH641
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| OCR Text |
... 2, 5 (hyper page mode (edo)) t hpc = t hpc (min.) , i o = 0 ma t rac = 60 ns 760 /cas before /ras i cc5 /ras cycling t rac = 50 ns 1,080 ma 1, 2 refresh current t rc = t rc (min.) , i o = 0 ma t rac = 60 ns 920 input leakage current... |
| Description |
3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作电压3.3V的DRAM模块)
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| File Size |
275.63K /
32 Page |
View
it Online |
Download Datasheet |
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NEC Corp.
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| Part No. |
MC-428LFG641
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| OCR Text |
... 2, 5 (hyper page mode (edo)) t hpc = t hpc (min.) , i o = 0 ma t rac = 60 ns 760 /cas before /ras i cc5 /ras cycling t rac = 50 ns 1,080 ma 1, 2 refresh current t rc = t rc (min.) , i o = 0 ma t rac = 60 ns 920 input leakage current... |
| Description |
3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作电压3.3V的DRAM模块)
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| File Size |
275.72K /
32 Page |
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it Online |
Download Datasheet |
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NEC Corp.
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| Part No. |
MC-428LFF721
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| OCR Text |
... 2, 5 (hyper page mode (edo)) t hpc = t hpc (min.) , i o = 0 ma t rac = 60 ns 855 /cas before /ras i cc5 /ras cycling t rac = 50 ns 1,215 ma 1, 2 refresh current t rc = t rc (min.) , i o = 0 ma t rac = 60 ns 1,035 input leakage curre... |
| Description |
3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作电压3.3V的动态RAM模块)
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| File Size |
279.08K /
32 Page |
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it Online |
Download Datasheet |
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| Part No. |
K4E160811D-BL60 K4E170811D-BC50
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| OCR Text |
...ange speed t rac t cac t rc t hpc remark -50 50ns 13ns 84ns 20ns 5v/3.3v -60 60ns 15ns 104ns 25ns 5v/3.3v ? active power dissipation speed 3.3v 5v 4k 2k 4k 2k -50 324 396 495 605 -60 288 360 440 550 unit : mw s e n s e a m p s & ... |
| Description |
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28
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| File Size |
259.46K /
21 Page |
View
it Online |
Download Datasheet |
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