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  high-power-factor Datasheet PDF File

For high-power-factor Found Datasheets File :: 35686    Search Time::3.672ms    
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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in ...Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avala...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 169.24K  /  10 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in ...Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avala...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text ... relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly Developmental Type TA17521. Features * 19A, 100V * ...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

File Size 59.17K  /  7 Page

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    IRF9620 FN2283

INTERSIL[Intersil Corporation]
Part No. IRF9620 FN2283
OCR Text ... relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17502. Features * 3.5A,...
Description 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system

File Size 57.96K  /  7 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ...age. The D 2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in ...Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avala...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in ...Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avala...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in ...Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avala...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text ...age. The D2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in ...Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avala...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

File Size 330.76K  /  10 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ...age. The D2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in ...Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avala...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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    MAX811TEUS

Maxim Integrated Products
Part No. MAX811TEUS
OCR Text ...1 S1 R2 TERMINAL A REGULATED HIGH VOLTAGE SUPPLY S2 C1 DUT SOCKET SHORT CURRENT PROBE (NOTE 6) TERMINAL B R = 1.5k C = 100pf Mil Std 883D Method 3015.7 Notice 8 TERMINAL D ONCE PER SOCKET ONCE PER BOARD 150 OHM...
Description PLASTIC ENCAPSULATED DEVICES

File Size 54.89K  /  8 Page

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For high-power-factor Found Datasheets File :: 35686    Search Time::3.672ms    
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