high power rf ldmos field effe pdf Datasheet P9 Description --- IC-ON-LINE


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high power rf ldmos field effe Datasheet PDF File

For high power rf ldmos field effe Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
Part No.	MW5IC2030MBR1 MW5IC2030GMBR1
Description	rf ldmos Wideband Integrated power Amplifiers 1930 MHz - 1990 MHz rf/MICROWAVE NARROW BAND high power AMPLIFIER 1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS rf ldmos Wideband Integrated power Amplifier
File Size	621.66K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLF6G22-45
Description	power ldmos transistor Product description45 W ldmos power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
File Size	62.81K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLF6G27LS-75 BLF6G27-75
Description	Product description75 W ldmos power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz WiMAX power ldmos transistor S BAND, Si, N-CHANNEL, rf power, MOSFET 75 W ldmos power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (ldmosT)\|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
File Size	99.11K / 14 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MHVIC2115R2
Description	MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA rf ldmos Integrated Circuit rf ldmos Wideband Integrated power Amplifier
File Size	575.72K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLL1214-250R
Description	L-band radar ldmos transistor L BAND, Si, N-CHANNEL, rf power, MOSFET L-band radar ldmos transistor BLL1214-250R<SOT502A (SOT502A)\|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; ldmos L-band radar power transistor
File Size	122.69K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA260451E
Description	Thermally-Enhanced high power rf ldmos FET 45 W, 2.62-2.68 GHz
File Size	217.81K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLF7G22LS-100P
Description	power ldmos transistor 100 W ldmos power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
File Size	671.16K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLF7G27LS-100 BLF7G27L-100
Description	power ldmos transistor 100 W ldmos power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
File Size	144.04K / 14 Page	View it Online	Download Datasheet

				Freescale (Motorola) MOTOROLA[Motorola, Inc]
Part No.	MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1
Description	GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V rf ldmos Wideband Integrated power Amplifier MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V rf ldmos Wideband Integrated power Amplifiers rf ldmos Wideband Integrated power Amplifiers
File Size	579.33K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF180601 PTF180601C PTF180601E
Description	ldmos field effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz ldmos的场效应晶体0瓦，DCS / PCS的兆赫波8050年，1930-1990兆赫 ldmos field effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz ldmos field effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
File Size	229.29K / 11 Page	View it Online	Download Datasheet

For high power rf ldmos field effe Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |