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For eoff Found Datasheets File :: 4828 Search Time::1.796ms
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				International Rectifier
Part No.	IRG7PH35UD1-EP IRG7PH35UD1PBF
OCR Text	...ecified) Parameter Qg Qge Qgc eoff td(off) tf eoff td(off) tf Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-Off Switching Loss Turn-Off delay time Fall time Turn-...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
File Size	400.08K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG7PH35UD-EP IRG7PH35UDPBF IRG7PH35UDPBF-15
OCR Text	...ied) Parameter Qg Qge Qgc Eon eoff Etotal td(on) tr td(off) tf Eon eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA Erec trr Irr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 50 A, 1200 V, N-CHANNEL IGBT, TO-247AD
File Size	461.38K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKW75N60T08 IKW75N60T
OCR Text	...60 A/s td(on) tr td(off) tf Eon eoff Ets T j = 25C , V C C = 40 0 V, I C =75A, V G E = 0 /1 5 V, R G =5 , L 1 ) =1 00nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions IKW75N60T q Value min. ty...
Description	80 A, 600 V, N-CHANNEL IGBT, TO-247AD Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
File Size	405.52K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKW50N60T08 IKW50N60T
OCR Text	...80 A/s td(on) tr td(off) tf Eon eoff Ets T j = 25C , V C C = 40 0 V, I C =50A, V G E = 0 /1 5 V, RG= 7 , L 1 ) =1 03nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions IKW50N60T q Value min. Typ....
Description	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
File Size	411.93K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKP20N60T IKP20N60T08
OCR Text	...880A/s td(on) tr td(off) tf Eon eoff Ets T j = 25C , V C C = 40 0 V, I C =20A, V G E = 0 /1 5 V, RG=12 , L 2 ) =1 31nH, C 2 ) =31pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions IKP20N60T IKW20N60T Value m...
Description	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
File Size	448.94K / 14 Page	View it Online	Download Datasheet

				Infineon Technologies A... Infineon Technologies AG
Part No.	IHW40N60T08 IHW40N60T
OCR Text	...energy td(on) tr td(off) tf Eon eoff Ets T j = 25C , V C C = 40 0 V, I C =40A, V G E = 0 /1 5 V, RG=5.6 , L 1 ) =4 0nH , C 1 ) =30pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions IHW40N60T q Value min. Typ...
Description	Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode
File Size	377.63K / 12 Page	View it Online	Download Datasheet

				http:// Fairchild Semiconductor
Part No.	FGA25N120ANTD07 FGA25N120ANTDF109 FGA25N120ANTD
OCR Text	... TC = 25C * Low switching loss: eoff, typ = 0.96mJ @ IC = 25A and TC = 25C * Extremely enhanced avalanche capability tm Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers su...
Description	1200V NPT Trench IGBT
File Size	582.44K / 9 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTM120UM70DAG
OCR Text	...gs Qgd Td(on) Tr Td(off) Tf Eon eoff Eon eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fa...
Description	Single switch with Series diodes MOSFET Power Module
File Size	264.89K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	GCU15CA-13009 GCU15CA-130
OCR Text	...M IDRM IGRM dv/dt tgt td Eon ts eoff QRR Erec IGT VGT Parameter On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-on delay ti...
Description	GCT (Gate Commutated Turn-off) THYRISTOR UNIT HIGH POWER INVERTER USE PRESS PACK TYPE
File Size	126.75K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	GCU04AA-13009
OCR Text	...M IDRM IGRM dv/dt tgt td Eon ts eoff QRR Erec IGT VGT Parameter On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-on delay ti...
Description	GCT (Gate Commutated Turn-off) THYRISTOR UNIT HIGH POWER INVERTER USE PRESS PACK TYPE
File Size	113.11K / 6 Page	View it Online	Download Datasheet

For eoff Found Datasheets File :: 4828 Search Time::1.796ms
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