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For dose Found Datasheets File :: 2806    Search Time::0.984ms    
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    FRK9160R FRK9160D FN3244 FRK9160H

INTERSIL[Intersil Corporation]
Part No. FRK9160R FRK9160D FN3244 FRK9160H
OCR Text ...resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. dose rate hardness (GAMMA DOT) exists for rates to 1E9 wi...
Description 40A/ -100V/ 0.085 Ohm/ Rad Hard/ P-Channel Power MOSFETs
40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system

File Size 47.27K  /  6 Page

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    FSJ160R FSJ160R1 FSJ160R3 FSJ160R4 FSJ160D FN4338 FSJ160D1 FSJ160D3

INTERSIL[Intersil Corporation]
Part No. FSJ160R FSJ160R1 FSJ160R3 FSJ160R4 FSJ160D FN4338 FSJ160D1 FSJ160D3
OCR Text ...ombined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio ...
Description 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system

File Size 59.37K  /  9 Page

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    FSJ9160R FSJ9160R1 FSJ9160R3 FSJ9160R4 FSJ9160D FN4465 FSJ9160 FSJ9160D1 FSJ9160D3

INTERSIL[Intersil Corporation]
Part No. FSJ9160R FSJ9160R1 FSJ9160R3 FSJ9160R4 FSJ9160D FN4465 FSJ9160 FSJ9160D1 FSJ9160D3
OCR Text ...ombined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio ...
Description 44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
From old datasheet system

File Size 45.96K  /  8 Page

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    FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 FSYC160D FSYC160D1 FSYC160D3 FN4547

INTERSIL[Intersil Corporation]
Part No. FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 FSYC160D FSYC160D1 FSYC160D3 FN4547
OCR Text ...ombined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio ...
Description From old datasheet system
Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

File Size 48.81K  /  8 Page

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    FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3
OCR Text ...ombined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio ...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET

File Size 60.40K  /  8 Page

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    HCS166HMSR FN2482 HCS166MS HCS166D HCS166DMSR HCS166KMSR HCS166K

INTERSIL[Intersil Corporation]
Part No. HCS166HMSR FN2482 HCS166MS HCS166D HCS166DMSR HCS166KMSR HCS166K
OCR Text ...ation Hardened CMOS SOS * Total dose 200K RAD (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) * dose Rate Survivability: >1 x 1012 RAD (Si)/s * dose Rate Upset >1010 R...
Description Register, Shift, Parellel-In/Serial-Out, 8-Bit, Rad-Hard, High-Speed, CMOS, Logic
Radiation Hardened 8-Bit Parallel-Input/Serial Output Shift Register
From old datasheet system

File Size 226.06K  /  9 Page

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    HCTS153K HCTS153KMSR HCTS153MS FN2463 HCTS153D HCTS153DMSR HCTS153HMSR

INTERSIL[Intersil Corporation]
Part No. HCTS153K HCTS153KMSR HCTS153MS FN2463 HCTS153D HCTS153DMSR HCTS153HMSR
OCR Text ...ation Hardened SOS CMOS * Total dose 200K RAD (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) * dose Rate Survivability: >1 x 1012 RAD (Si)/s * dose Rate Upset >101...
Description From old datasheet system
Radiation Hardened Dual 4-Input Multiplexer

File Size 138.30K  /  10 Page

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    IRHM7460SE

IRF[International Rectifier]
Part No. IRHM7460SE
OCR Text ...s up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a fe...
Description TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)

File Size 99.74K  /  4 Page

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    RH129B RH129C RH129 RH129A

Linear Technology, Corp.
Linear Technology Corporation
LINER[Linear Technology]
Part No. RH129B RH129C RH129 RH129A
OCR Text ...ration. BUR -I CIRCUIT TOTAL dose BIAS CIRCUIT PACKAGE INFORMATION 20V 15V BOTTOM VIEW 10k 12.4k 1 2 RH1009 BI RH129 TDBC1 H PACKAGE 2-LEAD TO-46 METAL CAN TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VZ VZ...
Description 6.9V Precision Reference 6.9V精密基准

File Size 126.74K  /  2 Page

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    5962F9961802V9A 5962F9961802VXC 5962F9961802VEC HS0-201HSEH-Q HS0-201HSRH/SAMPLE HS-201HSRH-13 HS1-201HSEH-Q

Intersil Corporation
Part No. 5962F9961802V9A 5962F9961802VXC 5962F9961802VEC HS0-201HSEH-Q HS0-201HSRH/SAMPLE HS-201HSRH-13 HS1-201HSEH-Q
OCR Text ...very slight sensitivity to low dose rate (e ldrs). these class v/q devices are tested and guaranteed for 300krad (si) total dose performance. power-off high input impedance enables the use of this device in redundant circuits without ca...
Description Radiation Hardened High Speed, Quad SPST, CMOS Analog Switch

File Size 218.53K  /  5 Page

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For dose Found Datasheets File :: 2806    Search Time::0.984ms    
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