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Nanya Technology, Corp.
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Part No. |
NT5DS8M16FT-43
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OCR Text |
...ing frequency (mhz) ddr466 (43) ddr400 (5t) ddr333 (6k) ddr266 (75b) 2 - - 133 100 2.5 - 166 166 133 3 233 200 - -
nt5ds8m16ft nt5ds8m16fs 128mb ddr sdram rev 0.5 may 06, 2005 preliminary 2 ? nanya technology corp . all rights reserve... |
Description |
8M X 16 DDR DRAM, 0.6 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
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File Size |
2,240.18K /
74 Page |
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Nanya Technology, Corp.
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Part No. |
NT5DS8M16FS-75B
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OCR Text |
...ximum operation frequency (mhz) ddr400 (5t) ddr333 (6k) ddr266 (75b) 2 - 133 100 2.5 166 166 133 3200- -
nt5ds8m16ft nt5ds8m16fs 128mb ddr sdram rev 0.7 mar 10, 2006 2 ? nanya technology corp . all rights reserved. nanya technology corp... |
Description |
8M X 16 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, GREEN, PLASTIC, TSOP2-66
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File Size |
2,090.89K /
73 Page |
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Atmel, Corp.
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Part No. |
K4H561638H-UIB00 K4H561638H-UICC0
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OCR Text |
...e 1.1 september 2006 - added ddr400 speed bin 1.2 january 2007 - revised overshoot/undershoot specification following jedec spec - added tpdex on ac parameter specification 1.3 february 2007 -upda ted idd spec for ddr400
rev. 1... |
Description |
16M X 16 DDR DRAM MODULE, 0.75 ns, PDSO66 LEAD FREE, TSOP2-66 16M X 16 DDR DRAM MODULE, 0.65 ns, PDSO66 LEAD FREE, TSOP2-66
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File Size |
407.84K /
24 Page |
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Samsung Semiconductor Co., Ltd.
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Part No. |
K4H560438E-ZLB30 K4H560838E-ZLB30
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OCR Text |
...v 0.1v, vddq : 2.6v 0.1v for ddr400 ? double-data-rate architecture; two data transfers per clock cycle ? bidirectional data strobe [dqs] (x4,x8) & [l(u)dqs] (x16) ? four banks operation ? differential clock inputs(ck and ck ) ? dll a... |
Description |
64M X 4 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60 32M X 8 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60
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File Size |
385.02K /
24 Page |
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Cypress Semiconductor, Corp.
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Part No. |
K4H1G0438A-UCB30 K4H1G0838A-UCB00
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OCR Text |
...v 0.1v, vddq : 2.6v 0.1v for ddr400 ? double-data-rate architecture; two data transfers per clock cycle ? bidirectional data strobe [dqs] (x4,x8) & [l(u)dqs] (x16) ? four banks operation ? differential clock inputs(ck and ck ) ? dll ... |
Description |
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 128M X 8 DDR DRAM, 0.75 ns, PDSO66
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File Size |
359.14K /
24 Page |
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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Part No. |
K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
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OCR Text |
...s -. Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333 -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM are sampled at the positive going edge of the system clock(CK) * Data I/O transa... |
Description |
DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装(x4/x8 DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
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File Size |
195.42K /
18 Page |
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it Online |
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