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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
K4H560838D-TC/LB0 K4H560838D-TC/LA2 K4H560838D-TC/LB3 K4H560838D-TC/LA0 K4H561638D-TC/LA0 K4H561638D-TC/LB0 K4H560438D-TC/LB0 K4H560438D-TC/LA2 K4H560438D-TCB3 K4H561638D-TC/LB3 K4H561638D-TC/LA2 K4H560438D-TC/LB3 K4H560438D-TC/LA0
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OCR Text |
... a2(ddr266a) - b0(ddr266b) - a0(ddr200) speed @cl2 133mhz 133mhz 100mhz 100mhz speed @cl2.5 166mhz 133mhz 133mhz - part no. org. max freq. interface package k4h560438d-tc/lb3 64m x 4 b3(ddr333@cl=2.5) sstl2 66pin tsop ii k4h560438d-tc/... |
Description |
64M X 4 DDR DRAM, 0.7 ns, PDSO66 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP -40 to 125 256Mb 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PDIP 256Mb 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC 256Mb 10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 8 Ch. 20-SOIC -40 to 85 10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 8 Ch. 20-TSSOP -40 to 85
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File Size |
239.34K /
25 Page |
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IBM Microeletronics
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Part No. |
IBMN625804GT3B IBMN625404GT3B
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OCR Text |
...hz)* ddr266a (7n) ddr266b (75n) ddr200 (8n) 2 133 100 100 2.5 143 133 125 * values are nominal (exact t ck should be used).
ibmn625404gt3b ibmn625804gt3b 256mb double data rate synchronous dram preliminary ?ibm corporation. all rights re... |
Description |
256Mb Double Data Rate Synchronous DRAM(256M位双数据速率同步动态RAM)
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File Size |
1,025.63K /
79 Page |
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it Online |
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HANBIT[Hanbit Electronics Co.,Ltd]
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Part No. |
HDD64M72D18W-13A HDD64M72D18W-13B HDD64M72D18W-10A HDD64M72D18W
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OCR Text |
...) tRC tRC(min), tCK=100MHz for ddr200,133MHz for DDR266A & DDR266B DQ,DM and DQS inputs changing twice per clock cycle Address and control inputs changing once per clock cycle One bank open, BL=4,Reads-Refer following page for detailed tes... |
Description |
DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., with 184Pin-DIMM
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File Size |
175.25K /
12 Page |
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Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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Part No. |
HY5DU12422CLTP HY5DU12422CLTP-X HY5DU121622CTP-X HY5DU121622CLTP-X
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OCR Text |
...v dd , v ddq = 2.5v 0.2v for ddr200, 266, 333 v dd , v ddq = 2.6v 0.1v for ddr400 ? all inputs and outputs are compatible with sstl_2 interface ? fully differential clock in puts (ck, /ck) operation ? double data rate interface ? so... |
Description |
CAP.00047UF 16V PPS FILM 0603 2% 512Mb DDR SDRAM 产品512Mb DDR SDRAM
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File Size |
249.62K /
31 Page |
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Samsung Electronic
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Part No. |
M381L3223CTL
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OCR Text |
...e(tis/tih) at slow slew rate in ddr200/266 ac specification - deleted exit self refresh to write command(txsw) in ddr200/266 ac specification - rename txsa(exit self refresh to bank active command) to txsnr(exit self refresh to non read c... |
Description |
32Mx72 DDR SDRAM 184pin DIMM based on 32Mx8 Data Sheet
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File Size |
174.62K /
16 Page |
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it Online |
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Price and Availability
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