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MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S19150R3 MRF5S19150 MRF5S19150SR3
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| OCR Text |
...S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier applications. * Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts...Gps 13 14 -- dB
24
26
--
%
IM3
--
- 36.5
- 35
dBc
ACPR
--
- ... |
| Description |
MRF5S19150, MRF5S19150R3, MRF5S19150S, MRF5S19150SR3 1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
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| File Size |
613.99K /
12 Page |
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it Online |
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Motorola Semiconductor Products
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| Part No. |
MRF7S19100N
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| OCR Text |
...e Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier am...Gps D PAR ACPR IRL 16.5 28.5 5.7 -- -- 17.5 30 6.1 - 38 - 12 19.5 -- -- - 36 - 10 dB % dB dBc dB
... |
| Description |
1930?1990 MHz, 29 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs
From old datasheet system
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| File Size |
529.85K /
16 Page |
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it Online |
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ERICSSON[Ericsson]
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| Part No. |
PTF10154
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| OCR Text |
...5-watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% efficiency with 11 dB gain. Ni...Gps P-1dB hD Y
Min
10.0 85 -- --
Typ
11 -- 43 --
Max
-- -- -- 10:1
Units
dB Watts % ... |
| Description |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦，1.93-1.99 GHz的GOLDMOS场效应晶体管
85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
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| File Size |
255.49K /
5 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
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| Part No. |
MRF5S19130R3 MRF5S19130SR3
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| OCR Text |
... to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. * Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts,...Gps 12 13 -- dB
23
25
--
%
IM3
--
- 37
- 35
dBc
ACPR
--
- 51... |
| Description |
N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
412.20K /
12 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
PTF080451E PTF080451
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| OCR Text |
...LDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and ...Gps
Min
-- -- -- -- --
Typ
2.0 -62 -76 18 40
Max
-- -- -- -- --
Units
% dBc dBc dB %... |
| Description |
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
LDMOS RF Power Field Effect Transistor 45 W 869-960 MHz
LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz
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| File Size |
154.66K /
9 Page |
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it Online |
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