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  9ns Datasheet PDF File

For 9ns Found Datasheets File :: 709    Search Time::2.984ms    
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    Samsung Electronic
Part No. KBE00S009M-D411
OCR Text ...lash 50ns mobile sdram 9ns mobile sdram 9ns sdram interface, density, voltage, organization, option 9 = m-sdr, 256m+256m, 1.8v/1.8v, x32 u t ram density, voltage, organization 0 = none package d = fbga(lead-free) nand fl...
Description 1Gb NAND x 2 256Mb Mobile SDRAM x 2

File Size 1,899.39K  /  86 Page

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    Samsung Electronic
Part No. KBE00S003M KBE00S003M-D411
OCR Text ...ash 50ns mobile sdram 9ns mobile sdram 9ns sdram interface, density, voltage, organization, option 3 = m-sdr, 256m+256m, 1.8v/1.8v, x16 u t ram density, voltage, organization 0 = none package d = fbga(lead-free) nand fl...
Description 1Gb NAND*2 256Mb Mobile SDRAM*2

File Size 1,809.86K  /  86 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MK32VT1632-10YC
OCR Text ... LVTTL CL=3 tCC3=10ns CL=3 tAC3=9ns None Parity Normal / Self x8 tCCD: 1 CLK 2, 4, 8 4 banks 2, 3 0 0 Data signal input setup time Data signal input hold time SPD data revision code Checksum for byte 0-62 Manufacturer's JEDEC ID code Man...
Description 16777216 Word x 32 Bit Synchronous Dynamic RAM Module (2 BANK)(16M字2位同步动态RAM模块)
From old datasheet system
16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):

File Size 65.61K  /  11 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KBE00S009M-D411 KBE00S009M-D4110
OCR Text ...lash 50ns mobile sdram 9ns mobile sdram 9ns sdram interface, density, voltage, organization, option 9 = m-sdr, 256m+256m, 1.8v/1.8v, x32 u t ram density, voltage, organization 0 = none package d = fbga(lead-free) nand fl...
Description 1Gb NAND x 2 256Mb Mobile SDRAM x 2
SPECIALTY MEMORY CIRCUIT, PBGA137

File Size 1,908.72K  /  86 Page

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    Sony
Part No. CXK77B1840AGB CXK77B3640AGB
OCR Text ...KHQV -----------------3.7ns / 4.9ns 3.8ns / 4.9ns 4.0ns / 5.2ns 4.5ns / 6.0ns Note: Contact Sony Memory Marketing for availability of DC mode functionality in CXK77B1840A. * Single 3.3V power supply (VDD): 3.3V 5% * Register - Register ...
Description 4Mb Late Write HSTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization)
From old datasheet system

File Size 283.45K  /  33 Page

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    Integrated Silicon Solution, Inc.
Part No. IS42S16100-7T IS42S16100-6T IS42S16100-10T
OCR Text ...ac 2 cas latency = 2 ? 6 ? 6 ? 9ns t chi clk high level width 2 ? 2.5 ? 3.5 ? ns t cl clk low level width 2 ? 2.5 ? 3.5 ? ns t oh 3 output data hold time cas latency = 3 2.5 ? 2.5 ? 2.5 ? ns t oh 2 cas latency = 2 2.5 ? 2.5 ? 2.5 ? ns t ...
Description x16 SDRAM x16内存

File Size 665.24K  /  78 Page

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    Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Part No. M30620MC-A18FP M30620MC-311FP M30620MC-345GP M30620MCM-207GP M30620MC-335GP M30620M8-359FP M30620M8-A69GP M30620MC-388FP
OCR Text ...0mh z , v cc =2.7v to 3.6v) 142.9ns (f(x in )=7mh z , v cc =2.2v to 3.6v with software one-wait) ? supply voltage ..................................... 2.7v to 3.6v (f(x in )=10mh z , without software wait) 2.4v to 2.7v (f(x in )=7mh z , wi...
Description SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 单片16位CMOS微机
RF CONNECTOR; SMA MALE FIELD REPLACEABLE, ACCEPTS PIN SIZE: .012; EMI / RFI GASKET: YES; .500" SQ. FLANGLE 单片16位CMOS微机

File Size 415.96K  /  33 Page

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For 9ns Found Datasheets File :: 709    Search Time::2.984ms    
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