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800v s Datasheet PDF File

For 800v s Found Datasheets File :: 4530 Search Time::2ms
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				STMICROELECTRONICS
Part No.	sTW10NK80Z
OCR Text	800v - 0.78 ? - 9a - to-220/fp-to-247 zener-protected supermesh tm mosfet general features extremely high dv/dt capability 100% avalanch...s well established strip-based powermesh? layout. in addition to pushing on-resistance significant...
Description	9 A, 800 V, 0.9 ohm, N-CHANNEL, si, POWER, MOsFET, TO-247
File Size	425.90K / 15 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	6MBI100s-14001
OCR Text	...=125C VGE=0V VCE=10V f=1MHz VCC=800v IC=100A VGE=15V RG=12 Tj=25C Tj=125C IF=100A IF=100A, VGE=0V Unit mA A V V pF s Turn-off time Diode forward on voltage Reverse recovery time V s Thermal resistance characteristics Item symbo...
Description	IGBT MODULE ( s series) 1400V / 100A 6 in one-package
File Size	379.89K / 4 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	APT4M120K
OCR Text	...F 5 VGs = 0V, VDs = 0V to 800v Effective Output Capacitance, Energy Related Total Gate Charge Gate-source Charge Gate-Drain Charge ...s 15 1.0 1150 16 10 V ns C V/ns IsD = 2A, TJ = 25C, VGs = 0V IsD = 2A, VDD = 100V 3 disD/dt = ...
Description	N-Channel MOsFET
File Size	240.23K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT60D120sG APT60D120B APT60D120B_05 APT60D120BG APT60D120s APT60D120B05
OCR Text	...F = 60A, diF/dt = -1000A/s VR = 800v, TC = 125C IF = 60A, diF/dt = -200A/s VR = 800v, TC = 125C IF = 60A, diF/dt = -200A/s VR = 800v, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN - APT60D120B(G)_s(G) TYP MA...
Description	60 A, 1200 V, sILICON, RECTIFIER DIODE, TO-247 ULTRAFAsT sOFT RECOVERY RECTIFIER DIODE
File Size	128.54K / 4 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	APT7M120s APT7M120B
OCR Text	...F 5 VGs = 0V, VDs = 0V to 800v Effective Output Capacitance, Energy Related Total Gate Charge Gate-source Charge Gate-Drain Charge ...s 28 1.0 1165 18 10 V ns C V/ns IsD = 3A, TJ = 25C, VGs = 0V IsD = 3A, VDD = 100V 3 disD/dt = ...
Description	N-Channel MOsFET
File Size	249.66K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8011JLL_04 APT8011JLL APT8011JLL04
OCR Text	800v 51A 0.110 POWER MOs 7 (R) R MOsFET G s D s Power MOs 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOsFETs. Both conduction and switching (R) losses are addressed with Power MOs 7...
Description	Power MOs 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOsFETs.
File Size	108.41K / 5 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTM100UM45DAG
OCR Text	...rain current v gs = 0v,v ds = 800v t j = 125c 3 ma r ds(on) drain ? source on resistance v gs = 10v, i d = 107.5a 45 52 m ...s t j = 125c 17.3 c aptm100um45dag aptm100um45dag ? rev 3 may, 2008 www.microsem...
Description	single switch with series diode MOsFET Power Module
File Size	237.45K / 6 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers
Part No.	7MBR50sC060
OCR Text	...C=30A VGE=15V RG=82 VR=600V VDM=800v VRM=800v VD=6V, IT=1A VD=6V, IT=1A ITM=50A chip terminal IF=50A chip terminal VR=800v T=25C T=100C T=25...s Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD...
Description	PIM/Built-in converter with thyristor and brake (s series)600V / 50A / PIM
File Size	426.73K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8014JLL_03 APT8014JLL APT8014JLL03
OCR Text	800v 42A 0.140 POWER MOs 7 (R) R MOsFET G s D s Power MOs 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOsFETs. Both conduction and switching (R) losses are addressed with Power MOs 7...
Description	Power MOs 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOsFETs.
File Size	91.89K / 5 Page	View it Online	Download Datasheet

				http:// MICROSEMI[Microsemi Corporation]
Part No.	APT8014L2FLLG APT8014L2FLL
OCR Text	800v 52A 0.16 APT8014L2FLL G APT8014L2FLLG Denotes RoHs Compliant, Pb Free Terminal Finish. POWER MOs 7 (R) R F...s patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate C...
Description	Power MOs 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOsFETs.
File Size	234.95K / 5 Page	View it Online	Download Datasheet

For 800v s Found Datasheets File :: 4530 Search Time::2ms
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