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Maixm
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Part No. |
MAX3966
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OCR Text |
...1PRBS transmitted at 266Mbps (3.75ns per bit). Note 6: Test pattern is a 213 - 1PRBS containing 72 consecutive zeros or 72 consecutive ones.
VCC VCC
+ OUTOUT+
VLED 1.55V
VCC
VPREBIAS OUTOUT+ OUT-
L1
FERRITE BEAD 0.1F 45... |
Description |
LED Driver with Programmable Prebias Voltage
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File Size |
367.60K /
12 Page |
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ICS
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Part No. |
MK3807-01
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OCR Text |
...utputs of different
packages 0.75ns
* * * * *
Max propagation delay of 3.8ns Operating voltage of 3.3V Advanced, low power, CMOS process Industrial temp range -40 C to +85 C Hysteresis on all inputs
Block Diagram
CLK1 CLK2 CLK3... |
Description |
Non Inverting Clock Driver/Buffer
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File Size |
95.03K /
7 Page |
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it Online |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
HGT1S7N60A4DS HGTP7N60A4D HGTG7N60A4D FN4827
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OCR Text |
.... . . . . . . . . . . . . . . . 75ns at TJ = 125oC * Low Conduction Loss * Temperature Compensating SABERTM Model www.intersil.com
Packaging
JEDEC STYLE TO-247
E C G
Ordering Information
PART NUMBER HGTG7N60A4D HGTP7N60A4D HGT1S7N6... |
Description |
AML42 Series, Solid State Indicator, Square, Compact Style, Lighted, 1 LED, Snap in panel mount 34 A, 600 V, N-CHANNEL IGBT, TO-263AB 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode From old datasheet system
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File Size |
91.22K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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Part No. |
RURG8060 FN3388
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OCR Text |
...recovery characteristics (trr < 75ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a var... |
Description |
80A/ 600V Ultrafast Diode 80A, 600V Ultrafast Diode 80A 600V Ultrafast Diode From old datasheet system
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File Size |
31.42K /
3 Page |
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it Online |
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INTERSIL[Intersil Corporation] Intersil, Corp.
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Part No. |
RURP8100 MUR8100E FN2780 MURP810
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OCR Text |
...100 are ultrafast diodes (trr < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energ... |
Description |
8A/ 1000V Ultrafast Diodes From old datasheet system (MUR8100E / MURP8100) 8A / 1000V Ultrafast Diodes 8A, 1000V Ultrafast Diodes(8A, 1000V超快二极用于开关电 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC 8A, 1000V Ultrafast Diodes 8A条,1000V共超快二极管
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File Size |
49.04K /
4 Page |
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it Online |
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Price and Availability
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