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  64mx4 Datasheet PDF File

For 64mx4 Found Datasheets File :: 170    Search Time::1.093ms    
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    K4H560838E-VC/LB3 K4H560438E-VC/LB3 K4H560438E-VC/LA2 K4H560838E-VC/LA2 K4H560438E-VC/LB0 K4H560838E-VC/LB0 K4H560838E-V

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560838E-VC/LB3 K4H560438E-VC/LB3 K4H560438E-VC/LA2 K4H560838E-VC/LA2 K4H560438E-VC/LB0 K4H560838E-VC/LB0 K4H560838E-VCA2 K4H560438E-VCA2 K4H560438E-VLB3 K4H560838E-VCB3 K4H560438E-VLB0 K4H560438E-VLA2 K4H560438E-VCB3 K4H560838E-VLB0 K4H560838E-VLA2 K4H560838E-VCB0 K4H560438E-VCB0 K4H560838E-VLB3
OCR Text ... 32 31 30 29 28 Organization 64mx4 32Mx8 Row Address A0~A12 A0~A12 Column Address A0-A9, A11 A0-A9 DM is internally loaded to match DQ and DQS identically. Row & Column address configuration Rev. 1.1 October, 2004 DDR SDR...
Description 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片DDR SDRAM内存规格54 sTSOP与铅二无(符合RoHS

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    K4H560438E-ZC/LA2 K4H560838E-ZC/LA2 K4H560438E-ZC/LB0 K4H560838E-ZC/LB0 K4H560438E-ZC/LB3 K4H560838E-ZC/LB3 K4H560838E-Z

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560438E-ZC/LA2 K4H560838E-ZC/LA2 K4H560438E-ZC/LB0 K4H560838E-ZC/LB0 K4H560438E-ZC/LB3 K4H560838E-ZC/LB3 K4H560838E-ZCB3 K4H560438E-ZCB3 K4H560438E-ZLA2 K4H560838E-ZLA2 K4H560438E-ZCA2 K4H560838E-ZCB0 K4H560438E-ZCB0 K4H560838E-ZCA2 K4H560838E-ZLA20 K4H560438E-ZLA20
OCR Text ...A4 VSS M VDD A3 Organization 64mx4 32Mx8 Row Address A0~A12 A0~A12 Column Address A0-A9, A11 A0-A9 DM is internally loaded to match DQ and DQS identically. Row & Column address configuration Rev. 1.1 October, 2004 DDR SDR...
Description 64M X 4 DDR DRAM, 0.75 ns, PBGA60 ROHS COMPLIANT, FBGA-60
32M X 8 DDR DRAM, 0.75 ns, PBGA60 ROHS COMPLIANT, FBGA-60
CSM, CER 103PF 1000V 10% 1210
CAP, 10NF 1KV 10%, SMT, 1812
Connector Cover; Enclosure Material:Aluminum; Cable Diameter Max:25.4mm; Cable Diameter Min:20.32mm; Cable Entry:Top; For Use With:AVX/Elco 8016 Series Rack and Panel Rectangular Connectors with 90 Contacts RoHS Compliant: Yes
CONN MEMORY CARD HDR CF NORMAL
CONN EJECTOR COMPACTFLASH RIGHT
Rectangular Industrial Connector Housing; Series:C-146; No. of Contacts:10; Gender:Female; Body Material:Aluminum Alloy; Connecting Termination:Screw; For Use With:C146 Rectangular Circular Connectors; Operating Voltage:400V RoHS Compliant: Yes
COVER, SIDE ENTRY, 38WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:38; Ways, No. of:38 RoHS Compliant: Yes
Rectangular Industrial Connector Housing; Series:C-146; No. of Contacts:6; Gender:Female; Body Material:Aluminum Alloy; Connecting Termination:Screw; Features:Spring Cover; For Use With:C146 Rectangular Circular Connectors RoHS Compliant: Yes
256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)

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    K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/LAA K4H560838E-TC/LB3 K4H560438E-TC/LB3 K4H560438E-TC/LB0 K4H560438E-T

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/LAA K4H560838E-TC/LB3 K4H560438E-TC/LB3 K4H560438E-TC/LB0 K4H560438E-TC/LA2 K4H560438E-TC/LAA K4H560838E K4H560438E-TLAA K4H560838E-TCAA K4H560838E-TLAA K4H560438E-TCAA K4H560438E-TCB3 K4H560438E-TLB3
OCR Text ... Package Pinout Organization 64mx4 32Mx8 Row Address A0~A12 A0~A12 Column Address A0-A9, A11 A0-A9 DM is internally loaded to match DQ and DQS identically. Row & Column address configuration Rev. 1.3 April. 2005 DDR SDRAM...
Description DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
   DDR SDRAM 256Mb E-die (x4, x8)

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    ProMOS Technologies
Part No. V58C2512164SB
OCR Text ...6, 4k : 12816 16mx8, 4k : 12880 64mx4, 8k : 25640 16mx16, 8k : 25616 temperature 32mx8, 8k : 25680 8mx32, 4k : 25632 blank: 0 - 70c type 128mx4, 8k : 51240 32mx16, 8k : 51216 i : -40 - 85c 58 : ddr 64mx8, 8k : 51280 e : -40 - 125c 56 : mo...
Description High Performance 512M-Bit DDR SDRAM

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    K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-G

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
Part No. K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-GLB0 K4H560438E-GLB3 K4H560438E-GCB3 K4H560438E-GCA2 K4H560838E-GCA2 K4H560438E-GCB0 K4H560838E-GCB0 K4H560838E-GLB0 K4H560838E-GLB3 K4H560838E-GLA2
OCR Text ...A4 VSS M VDD A3 Organization 64mx4 32Mx8 Row Address A0~A12 A0~A12 Column Address A0-A9, A11 A0-A9 DM is internally loaded to match DQ and DQS identically. Row & Column address configuration Rev. 1.3 April, 2005 DDR SDRAM...
Description DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
   256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

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    http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560438D-GCA2 K4H561638D-GLB3 K4H560838D-GLB3 K4H561638D-GCA2 K4H561638D-GLB0 K4H560438D-GLB0 K4H560438D-GLB3 K4H560838D-GLB0 K4H560838D-GCB3 K4H560838D-GCA2 K4H561638D-GLA2
OCR Text ...ion organization column address 64mx4 a0-a9, a11 32mx8 a0-a9 16mx16 a0-a8 8.0 0 0.10 14.00 0.10 14.0 0.10 0.10 max 0.45 0.05 0.35 0.05 1.10 0.10 1 2 3 4 5 6 7 8 9 encapsulant area 8.00 0.10 0.80 x 4 = 3.20 0.80 x 2 = 1....
Description DIODE ZENER SINGLE 200mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-323 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 500mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-123 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 200mW 30Vz 0.05mA-Izt 0.05 0.05uA-Ir 22.8 SOD-323 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 500mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-123 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 150mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-523 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 150mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-523 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 200mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-323 3K/REEL
DIODE ZENER SINGLE 200mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-323 3K/REEL
DIODE ZENER SINGLE 500mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-123 3K/REEL
DIODE ZENER SINGLE 200mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-323 3K/REEL

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4H560438E-ULAA K4H560838E-ULAA K4H560438E-UCAA K4H560838E-UCAA K4H560438E-ULB0 K4H560438E-ULA2 K4H560438E-ULB3 K4H560438E-UC/LAA K4H560838E-ULB3 K4H560438E-UCB3 K4H560438E-UCB0 K4H560838E-UCB3 K4H560438E-UC/LA2 K4H560438E-UC/LB0 K4H560438E-UC/LB3 K4H560438E-UCA2 K4H560838E-UC/LB0 K4H560838E-UC/LA2 K4H560838E-UC/LB3 K4H560838E-UCB0 K4H560838E-UC/LAA K4H560838E-UCA2 K4H560838E-ULA2
OCR Text ...tion row address column address 64mx4 a0~a12 a0-a9, a11 32mx8 a0~a12 a0-a9 64mb x 4 32mb x 8 ddr sdram ddr sdram 256mb e-die (x4, x8) pb-free rev. 1.1 october, 2004 units : millimeters 0.30 0.08 0.65typ (0.71) 22.22 0.1...
Description 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片与DDR SDRAM的规格铅66 TSOP-II免费(符合RoHS

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    K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/LA2 K4H560838H-UC/LA2 K4H561638H-UC/LA2 K4H560438H-UC/LB0 K4H561638H-U

Atmel, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/LA2 K4H560838H-UC/LA2 K4H561638H-UC/LA2 K4H560438H-UC/LB0 K4H561638H-UC/LB0 K4H560838H-UC/LB3 K4H561638H-UC/LB3 K4H560838H-UC/LB0 K4H560438H-UCA20 K4H560838H-UCA20 K4H560838H-UCB30
OCR Text ... Package Pinout Organization 64mx4 32Mx8 16Mx16 Row Address A0~A12 A0~A12 A0~A12 Column Address A0-A9, A11 A0-A9 A0-A8 DM is internally loaded to match DQ and DQS identically. Row & Column address configuration Rev. 1.2 Janua...
Description 32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
256Mb H-die DDR SDRAM Specification

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    ProMOS Technologies
Part No. V58C2256804SC
OCR Text ...6, 4k : 12816 16mx8, 4k : 12880 64mx4, 8k : 25640 16mx16, 8k : 25616 temperature 32mx8, 8k : 25680 8mx32, 4k : 25632 blank: 0 - 70c type 128mx4, 8k : 51240 32mx16, 8k : 51216 i : -40 - 85c 58 : ddr 64mx8, 8k : 51280 e : -40 - 125c 56 : mo...
Description 256 Mbit DDR SDRAM

File Size 1,050.91K  /  61 Page

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