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    HY62WT08081E HY62WT08081E-DGC HY62WT08081E-DGE HY62WT08081E-DGI HY62WT08081E-DPC HY62WT08081E-DPE HY62WT08081E-DPI HY62W

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
Part No. HY62WT08081E HY62WT08081E-DGC HY62WT08081E-DGE HY62WT08081E-DGI HY62WT08081E-DPC HY62WT08081E-DPE HY62WT08081E-DPI HY62WT08081E-DTC HY62WT08081E-DTE HY62WT08081E-DTI HY62WT0808 HY62WT08081E-DG70C
OCR Text ...imit Change : 2.4V => 2.2V @2.7~3.6V Changed Logo - HYUNDAI -> hynix - Marking Information Change Revised - Iccdr Limit Add : 2uA @40C Draft...04 May.23.2001 Final This document is a general product description and is subject to chang...
Description HY62WT08081E Series 32Kx8bit CMOS SRAM HY62WT08081E系列32Kx8bit CMOS SRAM

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    IDT54FCT162646AT IDT54FCT162646ATE IDT54FCT162646ATEB IDT54FCT162646ATPA IDT54FCT162646ATPAB IDT54FCT162646ATPF IDT54FCT

IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Integrated Device Techn...
Part No. IDT54FCT162646AT IDT54FCT162646ATE IDT54FCT162646ATEB IDT54FCT162646ATPA IDT54FCT162646ATPAB IDT54FCT162646ATPF IDT54FCT162646ATPFB IDT54FCT162646ATPV IDT54FCT162646ATPVB IDT54FCT162646CT IDT54FCT162646CTE IDT54FCT162646CTEB IDT54FCT162646CTPA IDT54FCT162646CTPAB IDT54FCT162646CTPF IDT54FCT162646CTPFB IDT54FCT162646CTPV IDT54FCT162646CTPVB IDT54FCT162646ET IDT54FCT162646ETE IDT54FCT162646ETEB IDT54FCT162646ETPA IDT54FCT162646ETPAB IDT54FCT162646ETPF IDT54FCT162646ETPFB IDT54FCT162646ETPV IDT54FCT162646ETPVB IDT54FCT162646T IDT54FCT162646TE IDT54FCT162646TEB IDT54FCT162646TPA IDT54FCT162646TPAB IDT54FCT162646TPF IDT54FCT162646TPFB IDT54FCT16646TPVB IDT54FCT162646TPV IDT54FCT162646TPVB IDT54FCT16646AT IDT54FCT16646ATE IDT54FCT16646ATEB IDT54FCT16646ATPA IDT54FCT16646ATPAB IDT54FCT16646ATPF IDT54FCT16646ATPFB IDT54FCT16646ATPV IDT54FCT16646ATPVB IDT54FCT16646CT IDT54FCT16646CTE IDT54FCT16646CTEB IDT54FCT16646CTPA IDT54FCT16646CTPAB IDT54FCT16646CTPF IDT54FCT16646CTPFB IDT54FCT16646CTPV IDT54FCT16646CTPVB IDT54FCT16646ET IDT54FCT16646ETEB IDT54FCT16646ETPA IDT54FCT16646ETPAB IDT54FCT16646ETPF IDT54FCT16646ETPFB IDT54FCT16646ETPV IDT54FCT16646ETPVB IDT54FCT16646T IDT54FCT16646TE IDT54FC
OCR Text ...T/CT/ET TRANSCEIVER/ REGISTERS (3-STATE) 74FCT162646T/AT/CT/ET 16-bit registered transceivers are built using advanced dual metal CMOS tech...04 1OE 1CLKBA 1SBA GND 1A1 1A2 GND 1B1 1B2 GND 1A1 1A2 GND 1B1 1B2 VCC 1A3 1A...
Description    FAST CMOS 16-BIT BUS TRANSCEIVER/ REGISTERS (3-STATE)
CAP 33UF 6V 20% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-4000
CAP 4.7UF 16V 10% TANT SMD-3528-12 TR-7-PL GOLD LOWESR-3000
CAP 4.7UF 16V 10% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-3000
CAP 4.7UF 16V 20% TANT SMD-3528-12 TR-7-PL GOLD LOWESR-3000
CAP 4.7UF 16V 20% TANT SMD-3528-12 TR-7-PL SN/PB5% LOWESR-3000
CAP 33UF 4V 10% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-3500
CAP 10UF 25V 20% TANT SMD-7343-31 TR-7-PL SN/PB5% LOWESR-400
FAST CMOS 16-BIT BUS TRANSCEIVER/ REGISTERS (3-STATE) 快速CMOS 16位总线收发寄存器(3态)
CAP 10UF 25V 20% TANT SMD-7343-31 TR-7-PL GOLD LOWESR-400 快速CMOS 16位总线收发寄存器(3态)
CAP 10UF 50V 20% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-700 快速CMOS 16位总线收发寄存器(3态)
CAP 100UF 6V 10% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-150 快速CMOS 16位总线收发寄存器(3态)
CAP 10UF 35V 20% TANT SMD-7343-31 TR-7-PL GOLD LOWESR-400 快速CMOS 16位总线收发寄存器(3态)

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    IDT54FCT162952CTEB IDT74FCT162952BTPV IDT73720 IDT73720A IDT73720AJ IDT73720APQF IDT73720J IDT73720PQF IDT74FCT16952ETPV

Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Part No. IDT54FCT162952CTEB IDT74FCT162952BTPV IDT73720 IDT73720A IDT73720AJ IDT73720APQF IDT73720J IDT73720PQF IDT74FCT16952ETPV IDT74FCT16952BTPA IDT74FCT16952BTPV
OCR Text ...L level outputs * Bidirectional 3-bus architecture: X, Y, Z -- One CPU bus: X -- Two (interleaved or banked) memory busses:Y & Z -- Each bus...04 1. This parameter is guaranteed by device characterization, but is not production tested. TRUT...
Description CAP 6.8UF 20V 20% TANT SMD-6032-15 TR-7-PL SN/PB5% LOWESR-1400 FCT SERIES, DUAL 8-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, PDSO56
16-BIT TRI-PORT BUS EXCHANGER

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    IDT7132SA20C IDT7132SA20CB IDT7132SA20F IDT7132SA20FB IDT7132SA20J IDT7132SA20JB IDT7132SA20L48 IDT7132SA20L48B IDT7132S

Integrated Device Techn...
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Part No. IDT7132SA20C IDT7132SA20CB IDT7132SA20F IDT7132SA20FB IDT7132SA20J IDT7132SA20JB IDT7132SA20L48 IDT7132SA20L48B IDT7132SA20P IDT7132SA20PB IDT7132SA25C IDT7132SA25CB IDT7132SA25F IDT7132SA25FB IDT7132SA25J IDT7132SA25JB IDT7132SA25L48 IDT7132SA25L48B IDT7132SA25P IDT7132SA25PB IDT7142SA20C IDT7142SA20CB IDT7142SA20F IDT7142SA20FB IDT7142SA20J IDT7142SA20JB IDT7142SA20L48 IDT7142SA20L48B IDT7142SA20P IDT7142SA20PB IDT7142SA25C IDT7142SA25CB IDT7142SA25F IDT7142SA25FB IDT7142SA25J IDT7142SA25JB IDT7142SA25L48 IDT7142SA25L48B IDT7142SA25P IDT7142SA25PB IDT7132SA35C IDT7132SA35CB IDT7132SA35F IDT7132SA35FB IDT7132SA35J IDT7132SA35JB IDT7132SA35L48 IDT7132SA35L48B IDT7132SA35P IDT7132SA35PB IDT7142SA35C IDT7142SA35CB IDT7142SA35F IDT7142SA35FB IDT7142SA35J IDT7142SA35JB IDT7142SA35L48 IDT7142SA35L48B IDT7142SA35P IDT7142SA35PB IDT7132SA55C IDT7132SA55CB IDT7132SA55F IDT7132SA55FB IDT7132SA55J IDT7132SA55JB IDT7132SA55L48 IDT7132SA55L48B IDT7132SA55P IDT7132SA55PB IDT7142SA55C IDT7142SA55CB IDT7142SA55F IDT7142SA55FB IDT7142SA55J IDT7142SA55JB IDT7142SA55L48 IDT7142SA55L48B IDT7142SA55P IDT7142SA55PB IDT7132SA IDT7132SA100CB IDT7142SA IDT7142LA IDT7142LA55FB IDT7132SA100C IDT7132SA100FB
OCR Text ...connected to the ground supply. 3. This text does not indicate orientation of the actual part-marking. 76 A1L A2L A3L A4L A5L 8 9 10 11 1...04 ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM (2) Rating Terminal Voltage with Respect to GND ...
Description HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM 2K X 8 DUAL-PORT SRAM, 35 ns, CQCC48
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM 2K X 8 DUAL-PORT SRAM, 35 ns, PQCC52
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM 2K X 8 DUAL-PORT SRAM, 35 ns, CDIP48
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM 2K X 8 DUAL-PORT SRAM, 25 ns, CQCC48
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM 2K X 8 DUAL-PORT SRAM, 25 ns, PQCC52

File Size 175.41K  /  11 Page

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    IDT71342SA20J IDT71342SA20PF IDT71342SA25J IDT71342SA25PF IDT71342SA35J IDT71342SA35PF IDT71342SA45J IDT71342SA45PF IDT7

Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Part No. IDT71342SA20J IDT71342SA20PF IDT71342SA25J IDT71342SA25PF IDT71342SA35J IDT71342SA35PF IDT71342SA45J IDT71342SA45PF IDT71342SA55J IDT71342SA55PF IDT71342SA70J IDT71342SA70PF IDT71342LA70PF IDT71342SA IDT7134 IDT71342LA70J IDT71342LA55J IDT71342LA55PF IDT71342LA35J IDT71342LA35PF IDT71342 IDT71342LA IDT71342LA20J IDT71342LA20PF IDT71342LA25J IDT71342LA25PF IDT71342LA45J IDT71342LA45PF
OCR Text ...R N/C I/O7R TA TBIAS TSTG PT(3) IOUT 0 to +70 -55 to +125 -55 to +125 1.5 50 -55 to +125 -65 to +135 -65 to +150 1.5 50 C C C W ...04 NOTES: 1. VIL (min.) > -1.5V for pulse width less than 10ns. 2. VTERM must not exceed Vcc + 0....
Description HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE 高K的8双端口静态RAM的信号量
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE 4K X 8 DUAL-PORT SRAM, 45 ns, PQFP64
350V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail

File Size 144.80K  /  13 Page

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    IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V

IDT[Integrated Device Technology]
Part No. IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V632S6PFG8 IDT71V632S6PFI IDT71V632S6PFI8 IDT71V632S5PF8 IDT71V632S5PFG IDT71V632S5PFG8 IDT71V632S5PFI8 IDT71V632S7PF IDT71V632S7PF8 IDT71V632S7PFG IDT71V632S7PFI IDT71V632S7PFI8 IDT71V632S8PF IDT71V632S8PF8
OCR Text 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features x x IDT71V632 x x x x x x 64K x 32 mem...04 (c)2000 Integrated Device Technology, Inc. IDT71V632, 64K x 32, 3.3V Synchronous SRAM with ...
Description 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter/ Single Cycle Deselect
3.3V 64K x 32 Pipelined
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter Single Cycle Deselect

File Size 271.54K  /  19 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ... = 30V --- ID = 50A ns --- RG = 3.6 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of ...04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 ...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...Units C/W www.irf.com 1 3/16/01 IRF1010E Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/...04 8) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 ...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...x. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resist...04 5) M IN 1 2 3 LE A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...-- --- --- --- 22 15 75 A 360 1.3 33 23 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS =...04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 140 12...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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