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300us Datasheet PDF File

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				HY ELECTRONIC
Part No.	MBR850
OCR Text	...on to case. -55 to +175 notes:1.300us pulse width,2% duty cycle. 250 2.measured at 1.0 mh z and applied reverse voltage of 4.0v dc. v f 0.70 0.80 0.75 0.84 0.95 0.95 to-220ac .413(10.5) .374(9.5) .146(3.7) .153(3.9) .108 (2.75...
Description	(MBR830 - MBR8100) SCHOTTKY BARRIER RECTIFIERS
File Size	117.97K / 2 Page	View it Online	Download Datasheet

				Taiwan Semiconductor Company, Ltd
Part No.	TSC742A TSC742ACZC0
OCR Text	... c note: single pulse. p w = 300us, duty 2% thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 1.8 o c/w thermal resistance - junction to ambient r ? ja 62.5 o c/w ...
Description	High Voltage NPN Transistor
File Size	400.69K / 6 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSG5509A
OCR Text	...temperature . 2. pulse width Q 300us, duty cycle Q 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board; 135 c/w when mounted on min. copper pad. ssg5509a n & p-ch enhancement mode power mosfet n-ch: 6.1 a, 30 v, r ds(on) ...
Description	N & P-Ch Enhancement Mode Power MOSFET
File Size	531.65K / 7 Page	View it Online	Download Datasheet

				Taiwan Semiconductor
Part No.	BAS40-50
OCR Text	... v reverse leakage current tp<300us, vr=30v i r -- 20 200 na forward voltage drop tp300us, if=1.0ma tp<300us, if=40ma v f -- - - 380 1000 mv junction capacitance vr=0, f=1.0mhz cj...
Description
File Size	23.81K / 1 Page	View it Online	Download Datasheet

				Taiwan Semiconductor Co., Ltd.
Part No.	MBRF10L100CTC0
OCR Text	...forward voltage (pulse test: tp=300us, < 1%) @ 5a / ta=25 @ 5a / ta=125 @ 10a / ta=25 @ 10a / ta=125 typ. 0.3 0.5 dimensions in inches and (millimeters) 10 max. 20 15 mbrf10l100ct typical junction capacitance (note 2) peak repetit...
Description
File Size	188.98K / 2 Page	View it Online	Download Datasheet

				Taiwan Semiconductor Co., Ltd.
Part No.	MBR10L100CTC0
OCR Text	...forward voltage (pulse test: tp=300us, < 1%) @ 5a / ta=25 @ 5a / ta=125 @ 10a / ta=25 @ 10a / ta=125 typ. 0.3 0.5 dimensions in inches and (millimeters) 10 max. 20 15 mbr10l100ct typical junction capacitance (note 2) peak repetiti...
Description
File Size	229.22K / 2 Page	View it Online	Download Datasheet

				Silicon Standard Corp.
Part No.	SSM7002KGEN
OCR Text	...erature of 150c. 2.pulse width <300us, duty cycle <2%. 3.mounted on a square inch of copper pad on fr4 board ; 270c/w when mounted on the minimum pad area required for soldering. converters and general load-switching circuits. the ssm7002kg...
Description	N-channel Enhancement-mode Power MOSFET
File Size	472.41K / 5 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K5P2880YCM
OCR Text	...an be typically achieved within 300us and an 16k-byte block erase can be typically achieved within 2ms. in serial read operation, a byte can be read by 50ns. the i/o pins serve as the ports for address and data input/output as well as comma...
Description	Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
File Size	556.18K / 29 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	27UF08
OCR Text	...ns (min.) - page program time: 300us (typ.) copy back program mode - fast page copy without external buffering cache program mode - internal cache register to improve the program throughput fast block erase - block erase time: 2ms ...
Description	Search --To HY27UF08
File Size	474.60K / 47 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY27SF161G2M
OCR Text	...ns (min.) - page program time: 300us (typ.) copy back program mode - fast page copy without external buffering cache program mode - internal cache register to improve the program throughput fast block erase - block erase time: 2ms ...
Description	(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
File Size	426.75K / 47 Page	View it Online	Download Datasheet

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