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  250v Datasheet PDF File

For 250v Found Datasheets File :: 27779    Search Time::1.687ms    
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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...Capacitance Min. 500 --- --- 2.0 --- --- --- --- Min. 3.7 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.58 --- --- --...50V, ID = 4.8A 38 ID = 8.0A 9.0 nC VDS = 400V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250v --- ID...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ... VGS(th) Gate Threshold Voltage 2.0 --- IDSS Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- IGSS Gate-to-Source Reve...50V, ID = 4.8A 38 ID = 8.0A 9.0 nC VDS = 400V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250v --- ID...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ...F840B 500 8.0 5.1 32 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS840B 8.0 5.1 32 320 8.0 13.4 3.5 Units V A A A V mJ A mJ V/ns W W/C ...50V, RG = 25 , Starting TJ = 25C 3. ISD 8.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse...
Description 500V N-Channel MOSFET

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ... VGS(th) Gate Threshold Voltage 2.0 gfs Forward Transconductance 4.0 --- IDSS Drain-to-Source Leakage Current --- Gate-to-Source Forward Lea...50V, ID = 4.8A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 V...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

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    IRF9130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9130SMD
OCR Text ...4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M ax. P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 1 3 1 ...50V ID = 8A RG = 7.5W ID = 8A ID = 5A ID = 8A ID = 250mA IDS = 5A VDS = 0.8BVDSS TJ = 125C ID = 1mA ...
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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    IRF9140

SEMELAB LTD
SEME-LAB[Seme LAB]
Part No. IRF9140
OCR Text ... 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 -100V -18A 0.2 * SIMPLE DRIVE REQUIREMENTS * SCREENING OPTIONS AVAILABLE 1.09 (0.043)...50V ID = -18A RG = 9.1 Min. -100 Typ. Max. Unit V -0.087 0.2 0.23 -4 -25 -250 -100 ...
Description P-CHANNEL POWER MOSFET

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ... DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 5-20 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ES...50V, ID -25A, RG = 6.8, RL = 2.0, (Figures 17, 18) MOSFET Switching Times are Essentially Independe...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

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    IRF9230 JANTXV2N6806 JANTX2N6806

IRF[International Rectifier]
Part No. IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text ... Current Min -200 -- -- -- -2.0 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- -0.20 -- -- -- -- -- -- -- -- -- -- -- -- -...50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. ...
Description TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP CER 250vAC 82PF 5% SL 1808
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9520L) is available for lowprofile...50V, ID = -4.0A -25 VDS = -100V, VGS = 0V A -250 VDS = -80V, VGS = 0V, T J = 150C 100 VGS = 20V nA -...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ...pacitance Min. -100 --- --- -2.0 1.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.10 --- --- --- --- --...50V, ID = -4.0A -25 VDS = -100V, VGS = 0V A -250 VDS = -80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -1...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

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