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  2140 Datasheet PDF File

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    NXP Semiconductors N.V.
Part No. BLF7G22L-250P BLF7G22LS-250P
OCR Text ...0 2.08 ? j5.64 2.76 ? j2.70 2140 2.16 ? j5.89 2.31 ? j2.74 2170 2.43 ? j5.97 2.31 ? j2.74 2230 3.94 ? j7.60 2.10 ? j2.96 fig 1. definition of transistor impedance 001aaf059 drain z l z s gate blf7g22l-250p_22ls-250p all in...
Description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Power LDMOS transistor BLF7G22L-250P<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;BLF7G22L-250P<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;

File Size 887.79K  /  14 Page

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    飞思卡尔半导体(中国)有限公司
Part No. 100B0R3BW 100B8R2CW
OCR Text ... ma, p out = 5 watts avg., f = 2140 mhz, channel bandwidth = 3.84 mhz, par = 8.5 db @ 0.01% probability on ccdf. power gain ? 31 db drain efficiency ? 15% acpr @ 5 mhz = - 45 dbc in 3.84 mhz bandwidth driver application ? typical single...
Description RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大

File Size 702.41K  /  16 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MRF5S21100HR3 MRF5S21100HSR3
OCR Text ...f handling 10:1 vswr, @ 28 vdc, 2140 mhz, 100 watts cw output power ? characterized with series equivalent large - signal impedance parameters ? internally matched, controlled q, for ease of use ? qualified up to a maximum of 32 v dd oper...
Description To be Used in class AB for PCN-PCS/cellularradio and WLL applications.

File Size 375.20K  /  12 Page

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    HMC497LP4E HMC497LP409

Hittite Microwave Corporation
Part No. HMC497LP4E HMC497LP409
OCR Text ...cpr & output noise for w-cdma @ 2140 mhz output noise @ 20 mhz offset vs. lo power over temperature -80 -75 -70 -65 -60 -170 -160 -150 -140 -130 -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 acpr (dbc) output noise @ 20 mhz offset (dbm/hz) carri...
Description SiGe WIDEBAND DIRECT MODULATOR RFIC, 100 - 4000 MHz

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    B39212B9469K610

EPCOS
Part No. B39212B9469K610
OCR Text ...2.0 2 november 24, 2010 b9469 2140.0 mhz please read cautions and warnings and important notes at the end of this document. saw components saw rf filter data sheet application n low-loss rf filter for mobile telephone wcdma band i/iv sys...
Description SAW Diversity Rx filter WCDMA Band I/IV

File Size 116.19K  /  8 Page

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    MAXIM INTEGRATED PRODUCTS INC
Part No. MAX2666EYT
OCR Text ...uency range bands 1, 4, 10 2110 2140 2170 mhz gain hg mode 10 14.5 17.5 db mg mode, gain_ = 10 0 5 8.5 lg mode, gain_ = 01 -15.5 -12 -9 noise figure hg mode 1.1 db mg mode, gain_ = 10 3 lg mode, gain_ = 01 12 input 3rd-order intercept (note...
Description 1 CHANNEL, AUDIO PREAMPLIFIER, PBCC6

File Size 744.29K  /  9 Page

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    飞思卡尔半导体(中国)有限公司
Part No. ATC100B0R6BT250XT ATC100B5R6BT250XT ATC700B0R3BT500XT ATC700B0R4BT500XT ATC100B6R8BT250XT ATC100B8R2BT250XT
OCR Text ...of handling 5:1 vswr, @ 28 vdc, 2140 mhz, 40 watts cw output power ? p out @ 1 db compression point = 40 watts cw ? stable into a 5:1 vswr. all spurs below - 60 dbc @ 100 mw to 10 watts cw p out . features ? characterized with series e...
Description RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大

File Size 817.71K  /  24 Page

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    PTMA180402M

Infineon Technologies AG
Part No. PTMA180402M
OCR Text ... performance, circuit tuned for 2140 mhz (data taken in infneon test fxture) moisture sensitivity level level test standard package temperature unit 3 ipc/jedec j-std-020 260 c ordering information type and version pac...
Description Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 ?2100 MHz

File Size 720.55K  /  14 Page

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    PTFA220121M

Infineon Technologies AG
Part No. PTFA220121M
OCR Text ...wo-carrier wcdma performance at 2140 mhz, 8 db par - p out = 33 dbm avg - acpr = ?45.5 dbc ? typical two-carrier wcdma performance at 877 mhz, 8 db par - p out = 33 dbm avg - acpr = ?44.5 dbc ? typical cw performance, 2140 mhz, 28 v - p o...
Description High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

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    PTFA212002E

Infineon Technologies AG
Part No. PTFA212002E
OCR Text ...= 28 v, i dq = 1600 ma, f 1 = 2140 mhz, f 2 = 2150 mhz, 3gpp wcdma signal, p/a r = 8.0 db, 3.84 mhz bw im3 acpr rf characteristics wcdma measurements (tested in infineon test fixture) v dd = 28 v, i dq = 2 x 800 ma, p out = 44 w av...
Description Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz

File Size 219.69K  /  10 Page

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