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TOSHIBA
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| Part No. |
TC58BYG0S3HBAI6
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| OCR Text |
... 1024blocks. the device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. the erase operation is implemented in a single block u... |
| Description |
BENAND (Built-in ECC SLCNAND)
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| File Size |
348.67K /
44 Page |
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Panasonic Battery Group
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| Part No. |
PAN1455 PAN1317 PAN1321 PAN1315A PAN1555 PAN1325A PAN1327
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| OCR Text |
2112 a comprehensive guide to choosing the right rf module panasonic electronic components provides powerful, highly fexible, cost effective rf modules for a wide variety of wireless personal area network (pan) applications. new extended ... |
| Description |
A Comprehensive Guide to Choosing the Right RF Module
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| File Size |
1,856.20K /
4 Page |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S
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| OCR Text |
... 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third ... |
| Description |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
395.61K /
12 Page |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
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| OCR Text |
... 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 23 W Avg., IDQ = 1050 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third ... |
| Description |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
561.39K /
12 Page |
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it Online |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3
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| OCR Text |
...= 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 3rd Ord... |
| Description |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
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| File Size |
578.61K /
12 Page |
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it Online |
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