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NEC, Corp.
NEC Corp.
NEC[NEC]
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| Part No. |
2SK3573-ZK 2SK3573 2SK3573-S 2SK3573-Z
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| OCR Text |
...C/W
10
1
Rth(ch-C) = 1.19c/W
0.1
0.01 10
100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16259EJ2V0DS
3
2SK3573
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
350 Pulsed 3... |
| Description |
SWITCHING N-CHANNEL POWER MOSFET 开N沟道功率MOSFET
SWITCHING N-CHANNEL POWER MOSFET 开关N沟道功率MOSFET
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| File Size |
75.97K /
8 Page |
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it Online |
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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM100DU-24H
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| OCR Text |
...5C Per Unit Base = Rth(j-c) = 0.19c/W
100
Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.35C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
44.26K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM100DY-24NF CM100DY
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| OCR Text |
...er unit base = 7 5 Rth(j-c) = 0.19c/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.35C/W -3 10
10-2
7 5 3 2
10-3 10-5 2 3 5 710-4 2 3 5 7 10-3
EMITTER CURRENT IE (A)
TMIE (s)
GATE CHARGE CHARACTERISTICS (TYPICAL) 20
GATE-EMI... |
| Description |
HIGH POWER SWITCHING USE
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| File Size |
89.70K /
4 Page |
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it Online |
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POWEREX INC
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM100E3U-24H
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| OCR Text |
...5C Per Unit Base = Rth(j-c) = 0.19c/W
100
Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.35C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
... |
| Description |
Chopper IGBTMOD 100 Amperes/1200 Volts
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| File Size |
59.26K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
CM150DU-24NFH
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| OCR Text |
...
10-2
7 5 3 2
Rth(j-c) = 0.19c/W
10-3
10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s)
10-3
Rth(j-c) = 0.35C/W
10-3
10-3 10-5 2 3 5 710-4 2 3 5 7 10-3
TIME (s)
GATE CHARGE CHARACTERISTICS (TYPICAL) 20
GATE-EMITTER VOLTAG... |
| Description |
HIGH POWER SWITCHING USE
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| File Size |
65.97K /
4 Page |
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it Online |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM200E3U-12H
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| OCR Text |
...5C Per Unit Base = Rth(j-c) = 0.19c/W
100
Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.35C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
... |
| Description |
Chopper IGBTMOD 200 Amperes/600 Volts
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| File Size |
59.30K /
4 Page |
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it Online |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM350DU-5F
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| OCR Text |
...5C Per Unit Base = Rth(j-c) = 0.19c/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
364
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| Description |
Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD350 Amperes/250 Volts
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| File Size |
53.22K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
CM600HA-5F
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| OCR Text |
...C Per Unit Base = R th(j-c) = 0.19c/W
100
100
10-1
10-1
10-2
10-2
10-3 10-3
10-2
10-1
TIME, (s)
100
101
10-3 10-3
10-2
10-1
TIME, (s)
100
101
Sep.1998
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| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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| File Size |
45.01K /
4 Page |
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it Online |
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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM75TU-34KA
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| OCR Text |
...5C Per Unit Base = Rth(j-c) = 0.19c/W
100
Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.35C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
... |
| Description |
Six IGBTMOD 75 Amperes/1700 Volts 75 A, 1700 V, N-CHANNEL IGBT
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| File Size |
463.30K /
4 Page |
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it Online |
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