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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0915A_03 MGF0915A MGF0915A03
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| OCR Text |
... 8200 8600 9000 9400 9800 10200 10600 11000 11400 11800 12200 S11 (mag) 0.948 0.947 0.946 0.946 0.945 0.944 0.942 0.939 0.935 0.930 0.925 0.918 0.911 0.903 0.894 0.884 0.871 0.855 0.833 0.807 0.778 0.748 0.717 0.688 0.671 0.672 0.697 0.746 ... |
| Description |
L & S BAND GaAs FET
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| File Size |
42.10K /
3 Page |
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it Online |
Download Datasheet
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0913A
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| OCR Text |
... 8200 8600 9000 9400 9800 10200 10600 11000 11400 11800 12200
S PARAMETERS
S11 (ang) -99.11 -129.78 -147.40 -159.19 -168.29 -175.89 177.02 170.52 165.48 159.35 150.60 138.53 123.05 104.53 83.65 61.24 38.21 15.46 -6.26 -26.32 -44.27 -59.... |
| Description |
L & S BAND GaAs FET [ SMD non - matched ]
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| File Size |
43.80K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT50M60L2VR_04 APT50M60L2VR APT50M60L2VR04
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| OCR Text |
...
MIN
TYP
MAX
UNIT
10600 1800 795 560 70 285 20 25 80 8 1510 3450 2065 3830 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Tur... |
| Description |
77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V㈢ MOSFET
POWER MOS V? MOSFET
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| File Size |
156.31K /
5 Page |
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it Online |
Download Datasheet |
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MICROSEMI POWER PRODUCTS GROUP
MICROSEMI[Microsemi Corporation]
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| Part No. |
APT50M60L2VFR_04 APT50M60L2VFR APT50M60L2VFR04 APT50M60L2VFRG
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| OCR Text |
...MIN
TYP
MAX
UNIT pF
10600 1800 795 560 70 285 20 25 80 8 1510 3450 2065 3830
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Tur... |
| Description |
77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V㈢ FREDFET
POWER MOS V? FREDFET
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| File Size |
157.20K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT10030L2VR_04 APT10030L2VR APT10030L2VR04
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| OCR Text |
...5C RG = 0.6 MIN TYP MAX UNIT
10600 1000 500 585 55 265 14 16 75 14
ns nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
128.30K /
4 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT10030L2VFR_04 APT10030L2VFR APT10030L2VFR04
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| OCR Text |
...5C RG = 0.6 MIN TYP MAX UNIT
10600 1000 500 585 55 265 14 16 75 14
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
129.11K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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