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  1.81.8v Datasheet PDF File

For 1.81.8v Found Datasheets File :: 6946    Search Time::1.625ms    
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    TS393M TS393C TS393I

STMicroelectronics
Part No. TS393M TS393C TS393I
OCR Text ...E (3V to 16V) OR DUAL SUPPLIES (1.5V to 8V) EXTREMELY LOW INPUT BIAS CURRENT : 1pA TYP EXTREMELY LOW INPUT OFFSET CURRENT : 1pA TYP INPUT CO...81 1.52 0.065 0.022 0.012 0.430 0.384 0.100 0.300 0.300 0260 0.200 0.150 0.060 3.18 0.125 ...
Description MICROPOWER DUAL CMOS VOLTAGE COMPARATORS

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    Z02W3.0V Z02W3.3V Z02W3.6V Z02W3.9V Z02W4.3V Z02W4.7V Z02W6.2V Z02W6.8V Z02W7.5V Z02W8.2V Z02W9.1V Z02W5.6V Z02W2.7V Z02

齐纳二极
http://
KEC Holdings
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
Part No. Z02W3.0V Z02W3.3V Z02W3.6V Z02W3.9V Z02W4.3V Z02W4.7V Z02W6.2V Z02W6.8V Z02W7.5V Z02W8.2V Z02W9.1V Z02W5.6V Z02W2.7V Z02W5.1V Z02W2.0V Z02W10V Z02W11V Z02W12V Z02W13V Z02W15V Z02W16V Z02W18V Z02W2.2V Z02W2.4V Z02W20V Z02W22V Z02W24V
OCR Text ...P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 - 0.10 0.55 0.20 MIN...81 6.00 6.60 6.20 6.39 6.60 7.20 6.80 7.02 7.20 7.90 7.43 7.66 7.90 8.70 8.16 8.43 8.70 9.60 9.00 9....
Description Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 50μA低电流操作,低反向漏,低噪声稳压二极管(250μA工作电流,小反向漏电流,低噪声,齐纳二极管)
RES,CHIP,1K,1/16W,5%,0402
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE
Z02W2.0V

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    2SK3408

EIC discrete Semiconductors
NEC[NEC]
Part No. 2SK3408
OCR Text ...AGE DRAWING (Unit : mm) 0.4 +0.1 -0.05 0.16+0.1 -0.06 0.65-0.15 +0.1 2.8 0.2 3 1.5 0 to 0.1 1 2 FEATURES * Can be dr...81 25 16 195 250 260 MIN. TYP. MAX. 10 10 2.5 UNIT A A V S m m m pF pF pF ns ns ns ns nC nC nC V...
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 60.29K  /  8 Page

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2VFR
OCR Text ... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5010B2VFR UNIT Volts Amps 500 47 188 30 40 520...81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 2.21 (.087) 2.59 (.102) 050-...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 64.50K  /  4 Page

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    APT5010B2VR APT5010B2VRG

ADPOW[Advanced Power Technology]
Advanced Power Technolo...
Part No. APT5010B2VR APT5010B2VRG
OCR Text ... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5010B2VR UNIT Volts Amps 500 47 188 30 40 520 ...81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 2.21 (.087) 2.59 (.102) 050-...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
New T-MAX?Package (Clip-mounted TO-247 Package)

File Size 61.66K  /  4 Page

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    APT5010LLC APT5010B2LC APT5010B2LC-06

Advanced Power Technolo...
Advanced Power Technology Ltd.
Part No. APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text ... TC = 25C Pulsed Drain Current 1 B2LC T-MAXTM TO-264 LLC D G S All Ratings: TC = 25C unless otherwise specified. APT5010...81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.05...
Description 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm

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    APT5010LVFR APT20M22LVFR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LVFR APT20M22LVFR
OCR Text ...20 4.16 -55 to 150 300 47 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source ...81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Drain Source 0.48 (.019) 0.84 (.033) 2....
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm

File Size 66.12K  /  4 Page

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    APT5010LVR

Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LVR
OCR Text ... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5010LVR UNIT Volts Amps 500 47 188 30 40 520 4...81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Drain Source 0.48 (.019) 0.84 (.033) 2....
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm

File Size 64.27K  /  4 Page

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