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Mitsubishi
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| Part No. |
M6MGB166S4BWG
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| OCR Text |
1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package)
DESCRIPTION The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip Scale Package (S-CSP) that contents ... |
| Description |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
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| File Size |
257.00K /
30 Page |
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it Online |
Download Datasheet
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Mitsubishi
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| Part No. |
M6MGB166S2BWG
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| OCR Text |
1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package)
DESCRIPTION The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip Scale Package (S-CSP) that contents ... |
| Description |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
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| File Size |
256.61K /
30 Page |
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it Online |
Download Datasheet |
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Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
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| Part No. |
IDT72T1875L4-4BB IDT72T1865L4-4BBI IDT72T1885L4-4BB IDT72T18105L4-4BB IDT72T1895L4-4BBI IDT72T1855L4-4BBI IDT72T1875L4-4BBI IDT72T1885L4-4BBI IDT72T18115L4-4BBI IDT72T1845L4-4BBI IDT72T18125L4-4BBI IDT72T18105L4-4BBI IDT72T1845L6-7BB IDT72T1865L6-7BB IDT72T1895L6-7BB IDT72T18105L6-7BB IDT72T1845L6-7BBI IDT72T1875L6-7BBI IDT72T1885L6-7BBI IDT72T1895L6-7BBI IDT72T18115L6-7BB IDT72T18125L6-7BB IDT72T1855L6-7BBI IDT72T1865L6-7BBI IDT72T18125L6-7BBI IDT72T18115L6-7BBI IDT72T18105L6-7BBI IDT72T18115L5BBI IDT72T1865L5BB IDT72T1865L5BBI IDT72T1845L5BBI IDT72T1855L5BBI IDT72T18105L5BB IDT72T18125L5BB IDT72T18105L5BBI IDT72T18125L5BBI IDT72T1845L10BBI IDT72T18115L10BBI IDT72T1865L10BBI
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| OCR Text |
... x 18/524,288 x 9, 524,288 x 18/1,048,576 x 9 IDT72T18125
FEATURES:
*
* * * * * * * * * * * *
Choose among the following memory organizations: IDT72T1845 2,048 x 18/4,096 x 9 IDT72T1855 4,096 x 18/8,192 x 9 IDT72T1865 8,192 x 1... |
| Description |
2.5 VOLT HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS 2.5伏高速TeraSync先进先出18-BIT/9-BIT配置
2.5 VOLT HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS 2.5伏高TeraSync先进先出18-BIT/9-BIT配置
2.5 VOLT HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS 128K X 18 OTHER FIFO, 3.4 ns, PBGA240
2.5 VOLT HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS 4K X 18 OTHER FIFO, 3.4 ns, PBGA144
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| File Size |
544.11K /
55 Page |
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Vanguard International ...
Vanguard International Semiconductor, Corp.
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| Part No. |
VG26S18165CJ-5 VG26V18165CJ-6 VG26VS18165C VG26S18165CJ-6 VG26V18165CJ-5
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| OCR Text |
1,048,576 x 16 - Bit CMOS Dynamic RAM
The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a singl... |
| Description |
1,048,576 x 16 - Bit CMOS Dynamic RAM 1M X 16 EDO DRAM, 60 ns, PDSO42
1,048,576 x 16 - Bit CMOS Dynamic RAM 1M X 16 EDO DRAM, 50 ns, PDSO42
1/048/576 x 16 - Bit CMOS Dynamic RAM
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| File Size |
233.14K /
27 Page |
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Vanguard Microelectronics Limited
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| Part No. |
VG2618165D VG26V18165D VG26S18165D
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| OCR Text |
1,048,576 x 16 - Bit CMOS Dynamic RAM
The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a singl... |
| Description |
CMOS DRAM
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| File Size |
567.91K /
26 Page |
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it Online |
Download Datasheet |
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Vanguard Microelectronics Limited
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| Part No. |
VG2618165C VG26V18165C
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| OCR Text |
1,048,576 x 16 - Bit CMOS Dynamic RAM
The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a singl... |
| Description |
CMOS DRAM
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| File Size |
629.99K /
26 Page |
View
it Online |
Download Datasheet |
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