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0.650 Datasheet PDF File

For 0.650 Found Datasheets File :: 31166 Search Time::2.735ms
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				PANASONIC[Panasonic Semiconductor]
Part No.	2SD2134 2SB1414
OCR Text	...ith radial taping 10.80.2 0.650.1 2.50.1 0.850.1 1.00.1 0.8 C 90 0.8 C 16.01.0 0.70.1 0.70.1 1.150.2 1.150.2 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter volta...
Description	Silicon PNP epitaxial planar type
File Size	72.95K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD2136
OCR Text	....2 Unit: mm 4.50.2 16.01.0 2.50.1 * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector-e...650.1 0.850.1 1.00.1 0.8 C 90 Features 3.80.2 0.8 C 0.70.1 0.70.1 1.150.2 1.150.2...
Description	Silicon NPN triple diffusion planar type
File Size	77.36K / 3 Page	View it Online	Download Datasheet

				Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
Part No.	2SD2137A 2SB1417 2SB1417A 2SD2137
OCR Text	...s -60 -80 -60 -80 -6 -5 -3 15 2.0 150 -55 to +150 Unit V 2.50.2 s Absolute Maximum Ratings 13.00.2 4.20.2 High forward curren...650.1 1.050.1 0.550.1 0.550.1 emitter voltage 2SB1417A Emitter to base voltage Peak collector cur...
Description	Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR
File Size	53.34K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD2137 2SD2137A
OCR Text	...150 Unit V 18.00.5 Solder Dip 0.350.1 5.00.1 10.00.2 1.0 s Absolute Maximum Ratings Parameter Collector to base voltage Collector t...650.1 1.050.1 0.550.1 0.550.1 emitter voltage 2SD2137A Emitter to base voltage Peak collector cur...
Description	Silicon NPN triple diffusion planar type(For power amplification)
File Size	52.93K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD2138A 2SB1418 2SB1418A 2SD2138
OCR Text	...2 Unit: mm 5.00.1 10.00.2 1.0 s Features q q q High foward current transfer ratio hFE High-speed switching Allowing automatic ins...650.1 1.050.1 0.550.1 0.550.1 C1.0 123 emitter voltage 2SB1418A Emitter to base voltage Pea...
Description	Silicon PNP epitaxial planar type Darlington(For power amplification)
File Size	59.81K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD2138 2SD2138A
OCR Text	...2 s Features 10.00.2 1.0 90 1.20.1 18.00.5 Solder Dip s Absolute Maximum Ratings (TC=25C) Parameter Symbol VCBO VCE...650.1 1.050.1 0.550.1 0.550.1 Collector to base voltage Collector to C1.0 emitter voltage 2...
Description	Silicon NPN triple diffusion planar type Darlington(For power amplification)
File Size	59.65K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD2139
OCR Text	...00.2 4.20.2 5.00.1 10.00.2 1.0 q 2.50.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer...650.1 1.050.1 0.550.1 0.550.1 C1.0 123 2.50.2 2.50.2 1:Base 2:Collector 3:Emitter MT4...
Description	Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification)
File Size	49.15K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SJ163
OCR Text	0.650.15 +0.2 unit: mm 0.650.15 2.8 -0.3 1.5 -0.05 +0.25 s Features 2.9 -0.05 1.90.2 +0.2 q Low ON-resistance q Low-noise characteristics 0.95 1 0.95 3 0.4 -0.05 +0.1 s Absolute Maximum Ratings (Ta = 2...
Description	Silicon P-Channel Junction FET
File Size	30.72K / 2 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ494 D11266EJ2V0DS00
OCR Text	...* Low Ciss Ciss = 2360 pF Typ. 0.70.1 2.54 * Built-in Gate Protection Diode 13.5 MIN. 12.00.2 ABSOLUTE MAXIMUM RATINGS (TA = 25...650.1 1. Gate 2. Drain 3. Source 123 ISOLATED TO-220 (MP-45F) Drain * f = 20 kHz, Duty C...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	68.73K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ531
OCR Text	... * Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM ...650 180 14 95 190 135 -1.0 70 Max -- -- -10 10 -2.0 0.065 0.110 -- -- -- -- -- -- -- -- -- -- Unit V...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	49.99K / 9 Page	View it Online	Download Datasheet

For 0.650 Found Datasheets File :: 31166 Search Time::2.735ms
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