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				API Technologies Corp
Part No.	TM7101PM TN7101PM
OCR Text	... 1.8 2.5 max. vswr in <1.5:1 2.0:1 max. out <1.25:1 2.0:1 max. reverse isolation (db) -31.5 -30 max. power @ 1 db comp. (dbm) +16.5 +15.0 m...164 -164 -164 -162 -155 ...
Description	RF AMPLIFIER MODEL
File Size	63.93K / 1 Page	View it Online	Download Datasheet

				NEC
Part No.	2SC4885
OCR Text	...d * Low Voltage Use * Low Cob : 0.9 pF TYP. * Low Noise Voltage : 90 mV TYP. 2.00.2 PACKAGE DIMENSIONS (Units: mm) 2.10.1 1.250.1 * ...164 .171 .180 .189 .199 .210 .219 .231 .241 .252 .263 .274 .288 .301 ANG 73.0 60.4 52.4 47.9 45.2 44...
Description	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD
File Size	94.85K / 13 Page	View it Online	Download Datasheet

				California Eastern Labs
Part No.	NE5520279A NE5520279A-T1-A
OCR Text	...UT POWER: +32 dBm TYP 5.7 MAX. 0.60.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. Source 1.50.2 ...164.1 162.9 161.8 160.6 159.5 158.3 157.3 156.3 155.4 154.5 153.8 152.9 152.5 151.5 150.8 150.1 149....
Description	3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
File Size	265.19K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5434 2SC5434-T1
OCR Text	...flat package (1.4 mm x 1.8 mm x 0.59 mm: TYP.) * Contains same chip as 2SC5008 PACKAGE DIMENSIONS (in mm) 1.4 0.05 0.8 0.1 1.4 0.1...164.3 159.7 155.6 152.9 MAG 15.156 9.926 7.179 5.703 4.740 4.069 3.508 3.075 2.729 2.474 2.285 2.154...
Description	Reduced noise high frequency amplification transistor NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
File Size	59.68K / 8 Page	View it Online	Download Datasheet

				NEC
Part No.	NE24283B
OCR Text	0.6 dB TYP at 12 GHz * HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz * GATE LENGTH: 0.25 m * GATE WIDTH: 200 m * HERMETIC METAL/CERAMIC PACKAG...164.4 158.6 152.4 145.9 138.9 131.8 125.1 MAG 5.596 5.570 5.550 5.497 5.405 5.304 5.188 5.048 4.899 ...
Description	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)
File Size	39.41K / 4 Page	View it Online	Download Datasheet

				Ericsson Microelectronics
Part No.	PTF10031
OCR Text	0 GHz GOLDMOSTM Field Effect Transistor Description The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications ...164 -165 -165 -164 -164 -163 -163 -163 -163 -164 -164 -165 -166 -167 -168 -170 -171 -173 -174 -176 -...
Description	50 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 50瓦，1.0 GHzGOLDMOS场效应晶体管
File Size	214.70K / 6 Page	View it Online	Download Datasheet

				NEC
Part No.	2SC5436
OCR Text	...old thin flat package (1.4 mm x 0.8 mm x 0.59 mm: TYP.) * Contains same chip as 2SC5186 PACKAGE DIMENSIONS (in mm) 1.4 0.05 0.8 0.1 ...164.4 149.8 135.7 123.0 113.7 105.5 96.0 87.6 81.0 74.8 67.4 60.8 56.2 52.5 47.6 MAG 0.056 0.106 0.1...
Description	NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
File Size	85.93K / 13 Page	View it Online	Download Datasheet

				http:// NEC[NEC] NEC Corp.
Part No.	2SC5436
OCR Text	...old thin flat package (1.4 mm x 0.8 mm x 0.59 mm: TYP.) * Contains same chip as 2SC5186 PACKAGE DIMENSIONS (in mm) 1.4 0.05 0.8 0.1 ...164.4 149.8 135.7 123.0 113.7 105.5 96.0 87.6 81.0 74.8 67.4 60.8 56.2 52.5 47.6 MAG 0.056 0.106 0.1...
Description	NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
File Size	75.26K / 12 Page	View it Online	Download Datasheet

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