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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD12MVS1
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| OCR Text |
0.2+/-0.05
(0.22)
RoHS Compliance, DESCRIPTION
RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
Silicon MOSFET Power Transistor, 175MHz, 12W
OUTLINE DRAWING
6.0+/-0.15 4.6+/-0.0... |
| Description |
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
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| File Size |
428.96K /
7 Page |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
RD151TS501USE RD151TS501US
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| OCR Text |
...equency: * Output frequency: 27.0 to 36.0 MHz 54.0 to 72.0 MHz (1 : 2), 67.5 to 72.0 MHz (1 : 2.5) 27.0 to 36.0 MHz (1 : 1), 33.75 to 36.0 MHz (1 : 1.25) (Selectable)
Key Specifications
* * * * * * * Supply voltages: VDD = 2.7 to 3.6 V ... |
| Description |
PLL clock generator series
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| File Size |
93.99K /
7 Page |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
RD151TS502USE RD151TS502US
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| OCR Text |
...equency: * Output frequency: 27.0 MHz 27.0 MHz (1 : 1), 33.75 MHz (1 : 1.25) 13.5 MHz (1 : 0.5), 16.875MHz (1 : 0.625) (Selectable)
Key Specifications
* * * * * * * Supply voltages: VDD = 2.7 to 3.6 V Operating temperature = -10 to 75 C... |
| Description |
PLL clock generator series
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| File Size |
95.44K /
7 Page |
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Quanzhou Jinmei Electro...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD15HVF1 RD15HVF1-15
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| OCR Text |
...VDS=12V, IDS=1mA VDD=12.5V, Pin=0.6W, f=175MHz,Idq=0.5A VDD=12.5V, Pin=3W, f=520MHz,Idq=0.5A VDD=15.2V,Po=15W(PinControl) f=175MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) VDD=15.2V,Po=15W(PinControl) f=520MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(... |
| Description |
Silicon MOSFET Power Transistor, 175MHz520MHz,15W
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| File Size |
363.09K /
9 Page |
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Quanzhou Jinmei Electro...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD16HHF1 RD16HHF1-15
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| OCR Text |
...+/- 20 V Tc=25C 56.8 W Zg=Zl=50 0.8 W 5 A C 150 -40 to +150 C C/W junction to case 2.2
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C , UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D PA... |
| Description |
Silicon MOSFET Power Transistor 30MHz,16W
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| File Size |
272.16K /
8 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD20HMF1
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| OCR Text |
0+/-0.3 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor,900MHz,20W
OUTLINE
RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applicatio... |
| Description |
Silicon MOSFET Power Transistor,900MHz,20W
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| File Size |
333.23K /
7 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD30HUF1
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| OCR Text |
0+/-0.3 18.0+/-0.3 7.6+/-0.3 4-C1
Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION
RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
7.2+/-0.5
OUTLINE
*High power gain: Po... |
| Description |
Silicon MOSFET Power Transistor/520MHz/30W
Silicon MOSFET Power Transistor,520MHz,30W
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| File Size |
386.46K /
7 Page |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
RD3CYD08WPE RD3CYD08 RD3CYD08CME RD3CYD08VSE
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| OCR Text |
0 : -40
, 3.6 V +85C IOH short = -130 mA (typ) (@VCC = 3.3 V) IOL short = 45 mA (typ) (@VCC = 3.3 V)
( CM VS WP E (3000 pcs/reel) E (3000 pcs/reel) E (3000 pcs/reel) )
( RD3CYD08CME RD3CYD08VSE RD3CYD08WPE CMPAK-5 VSON-5 WCSP-5
)
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| Description |
IGBT DRIVER
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| File Size |
168.58K /
10 Page |
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it Online |
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DYNEX SEMICONDUCTOR LTD
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
RD43FF06 RD43FF RD43FF01 RD43FF02 RD43FF03 RD43FF04 RD43FF05
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| OCR Text |
0 October 2001
FEATURES
s s s
KEY PARAMETERS VRRM IF(AV) IFSM (max) (max) 600V 4466A 51500A
Optimised For High Current Rectifiers High Surge Capability Very Low On-state Voltage
APPLICATIONS
s s s
Electroplating Power Suppl... |
| Description |
Rectifier Diode Target Information 4466 A, 100 V, SILICON, RECTIFIER DIODE
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| File Size |
96.23K /
7 Page |
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it Online |
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Price and Availability
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