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  -17a Datasheet PDF File

For -17a Found Datasheets File :: 1389    Search Time::1.344ms    
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    SPA17N80C3 SPB17N80C3 SPP17N80C3

INFINEON[Infineon Technologies AG]
Part No. SPA17N80C3 SPB17N80C3 SPP17N80C3
OCR Text ...tive tAR limited by Tjmax2) ID=17A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature -55...+150 Page 1 ...
Description for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor

File Size 330.70K  /  13 Page

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    SPW17N80C3

INFINEON[Infineon Technologies AG]
Part No. SPW17N80C3
OCR Text ... Unit V V(BR)DS VGS=0V, ID=17A A 25 250 100 0.29 nA Gate-source leakage current IGSS VGS=20V, VDS=0V VGS=10V, ID=11A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, ope...
Description for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS⑩ Power Transistor
Cool MOS??Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor

File Size 253.54K  /  11 Page

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    SSP7431P

SeCoS Halbleitertechnologie GmbH
Part No. SSP7431P
OCR Text 17a, -30v, r ds(on) 13 m ? p-channel enhancement mosfet 01-may-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies h...
Description P-Channel Enhancement MOSFET

File Size 514.62K  /  4 Page

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    FQP17P06 FQP17P06J69Z

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. FQP17P06 FQP17P06J69Z
OCR Text ... TM Features * * * * * * * -17a, -60V, RDS(on) = 0.12 @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating S ...
Description 17 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220
60V P-Channel MOSFET
60V N-Channel MOSFET

File Size 684.06K  /  8 Page

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    SSP7430N

SeCoS Halbleitertechnologie GmbH
Part No. SSP7430N
OCR Text ...- 13.5 m ? v gs = 10v, i d = 17a - - 20 v gs = 4.5v, i d = 13a forward transconductance a g fs - 40 - s v ds = 15v, , i d = 17a diode forward voltage v sd - 0.7 - v i s = 2.3a, v gs = 0v dynamic b total gate charge q g ...
Description N-Channel Enhancement MOSFET

File Size 169.25K  /  2 Page

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    2SK3386

Guangdong Kexin Industrial Co.,Ltd
Part No. 2SK3386
OCR Text ...on)1 =21m max. (v gs =10v,i d = 17a) r ds(on)2 =36m max. (v gs =4.0v,i d = 17a) low c iss :c iss = 2100 pf typ. built-in gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 60 v ...
Description MOS Field Effect Transistor

File Size 42.74K  /  1 Page

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    ITT, Corp.
Astrodyne, Inc.
Part No. EDCA-5007 EDCC-5007
OCR Text ...k 71% edca-5007 15 vdc 0.17a (0.21a) 100 mv pk-pk 71% dual output - chassis mount edcc-5006 12 vdc 0.21a (0.26a) 100 mv pk-pk 71% edcc-5007 15 vdc 0.17a (0.21a) 100 mv pk-pk 71% dual output - din rail mount...
Description 5W Ultraminiature Encapsulated Switching Power Supplies 2-OUTPUT 5 W DC-DC REG PWR SUPPLY MODULE

File Size 605.78K  /  5 Page

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    BSS123L6327HTSA1 BSS123

Infineon Technologies A...
Infineon Technologies AG
Part No. BSS123L6327HTSA1 BSS123
OCR Text ...8 reverse diode d v /d t i s =0.17a, v ds =80v, d i /d t =200a/s, t jmax =150c d v /d t 6 kv/s gate source voltage v gs 20 v esd sensitivity (hbm) as per mil-std 883 class 1 a power dissipation t a =25c p tot 0.36 w operating and storage ...
Description SIPMOS?/a> Small-Signal-Transistor Feature
SIPMOS Small-Signal-Transistor Feature

File Size 122.59K  /  8 Page

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    IRFB16N50KNBSP IRFB16N50K

International Rectifier
Part No. IRFB16N50KNBSP IRFB16N50K
OCR Text ...V RDS(on) typ. 285m: ID 17A Benefits l l l l G S D TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V ID @ TC = 100C Continuous Drain Current, VGS @ 10V Pulsed Drain Curre...
Description 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
SMPS MOSFET

File Size 157.81K  /  8 Page

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    2SK3694-01L 2SK3694-01S 2SK3694-01SJ

FUJI ELECTRIC CO LTD
Part No. 2SK3694-01L 2SK3694-01S 2SK3694-01SJ
OCR Text ...v gs =0v f=1mhz v cc =225v i d =17a v gs =10v l=1.41mh t ch =25c i f =17a v gs =0v t ch =25c i f =17a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c 450 3.0 5.0 25 250 100 0.29 0.38 714 1275 1900 200 300 9...
Description N-CHANNEL SILICON POWER MOSFET
17 A, 450 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 258.19K  /  4 Page

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For -17a Found Datasheets File :: 1389    Search Time::1.344ms    
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