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				Fairchild Semiconductor
Part No.	FQB13N50C08 FQB13N50CTM
OCR Text	...alf bridge topology. features 13a, 500v, r ds(on) = 0.48 ? @v gs = 10 v low gate charge ( typical 43nc) low crss ( typical 20pf) fast switching 100% avalanche tested improved dv/dt capability absolute maximum ratings ...
Description	500V N-Channel MOSFET
File Size	924.64K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7805TR IRF7805ATR
OCR Text	...unction temperature. i sd 13a, di/dt 110a/s, v dd v (br)dss , t j 150c pulse width 300s; duty cycle when mounted on 1 inch square copper board, t<10 sec ...
Description	30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	103.27K / 7 Page	View it Online	Download Datasheet

				Rohm
Part No.	RSD131P10
OCR Text	13a power mosfet l outline v dss - 100v cpt3 (sc-63) <sot-428> r ds(on) (max.) 200m w i d - 13a p d 20w l features l inner circuit 1) low on-resistance. 2) fast switching speed. 3) drive circuits can be simple. 4) parallel use is easy. 5...
Description	Pch 100V 13A Power MOSFET
File Size	503.67K / 13 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	2SK3608-01L03 2SK3608-01S 2SK3608-01SJ
OCR Text	...v gs =0v f=1mhz v cc =100v i d =13a v gs =10v l=620 h t ch =25c i f =13a v gs =0v t ch =25c i f =13a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c 200 3.0 5.0 25 250 10 100 131 170 5.5 11 770 1155 110 16...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	255.74K / 4 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	2SK3607-01MR
OCR Text	...v gs =0v f=1mhz v cc =100v i d =13a v gs =10v l=620 h t ch =25c i f =13a v gs =0v t ch =25c i f =13a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c kvrms 200 3.0 5.0 25 250 10 100 131 170 5.5 11 770 1155 ...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	105.60K / 4 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	2SK3606-0103
OCR Text	...v gs =0v f=1mhz v cc =100v i d =13a v gs =10v l=620 h t ch =25c i f =13a v gs =0v t ch =25c i f =13a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c 200 3.0 5.0 25 250 10 100 131 170 5.5 11 770 1155 110 16...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	102.43K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFR26N100P
OCR Text	... ma r ds(on) v gs = 10v, i d = 13a, note 1 430 m features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation ? low drain to tab capacitance(...
Description	Polar Power MOSFET HiPerFET
File Size	102.64K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFC26N50P
OCR Text	....3 c note: test current i t = 13a isoplus220 outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,...
Description	PolarHV HiPerFET Power MOSFET ISOPLUS 220
File Size	167.24K / 5 Page	View it Online	Download Datasheet

				Seme LAB
Part No.	SML100M12MSF
OCR Text	...in-source on-resistance i d = 13a, v gs = 3v, t j = 25c - 0.09 0.15 i d = 13a, v gs = 3v, t j = 175c - 0.29 - q g total gate charge v ds = 600v, i d = 13a, v gs = 0v to +3v - 28 - nc q gs gate-...
Description	NORMALLY-OFF SILICON CARBIDE POWER JFET
File Size	103.43K / 3 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRFR13N20DTRR
OCR Text	... r ds(on) max i d 200v 0.235 w 13a typical smps topologies l telecom 48v input forward converters parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 13 i d @ t c = 100c continuous drain current, v gs @ 10v 9....
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 13A I(D) \| TO-252AA 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\|3A条（丁）\|52AA
File Size	210.30K / 10 Page	View it Online	Download Datasheet

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