| |
|
 |
Macronix 旺宏
|
| Part No. |
MX29L8000T_B 29L8000T
|
| OCR Text |
...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produce reliable cycling. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi proces... |
| Description |
SINGLE VOLTAGE 3V ONLY FLASH EEPROM
From old datasheet system
|
| File Size |
160.59K /
31 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Macronix 旺宏
|
| Part No. |
MX29F080 29F080
|
| OCR Text |
...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F080 uses a 5.0V10% VCC supply to perform the High Reliability Erase and auto P... |
| Description |
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY
From old datasheet system
|
| File Size |
187.50K /
31 Page |
View
it Online |
Download Datasheet |
| |
|
|
Macronix 旺宏
|
| Part No. |
MX29F100T_B 29F100TB
|
| OCR Text |
...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F100T/B uses a 5.0V10% VCC supply to perform the High Reliability Erase and aut... |
| Description |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
From old datasheet system
|
| File Size |
233.29K /
41 Page |
View
it Online |
Download Datasheet |
| |
|
|
AGERE[Agere Systems]
|
| Part No. |
LCK4310 LCK4310GF-DT LCK4310GF-DB
|
| OCR Text |
... four layer board inside a wind tunnel with forced air convection. JMA is reported at airflows of 200 LFPM and 500 LFPM (linear feet per minute), which roughly correspond to 1 m/s and 2.5 m/s (respectively). JMA is calculated using the foll... |
| Description |
Low-Voltage PLL Clock Driver
|
| File Size |
63.46K /
10 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
