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  sdm. Datasheet PDF File

For sdm. Found Datasheets File :: 1758    Search Time::1.234ms    
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    STP5NB90 STP5NB90FP 6166 5NB90 STP5NA90

STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STMicroelectronics N.V.
Part No. STP5NB90 STP5NB90FP 6166 5NB90 STP5NA90
OCR Text ...URCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 5 A V GS = 0 700 5...
Description N-CHANNEL 900V - 2.3 OHM - 5A - TO-220/TO-220FP
From old datasheet system
ZENER DIODES
N - CHANNEL PowerMESH MOSFET
N - CHANNEL 900V - 2.3 ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET -频道900V - 2.3欧姆- 5A TO-220/TO-220FP PowerMESH MOSFET

File Size 45.04K  /  6 Page

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    STP60N05-14 STP60N06-14 4893 P60N05

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STP60N05-14 STP60N06-14 4893 P60N05
OCR Text ...URCE DRAIN DIODE Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A I SD = 60 A V...
Description From old datasheet system
N-CHANNEL Power MOSFET
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

File Size 76.52K  /  5 Page

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    STP60NE03L-10 5467

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STP60NE03L-10 5467
OCR Text ...RCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A V GS = 0 70 0...
Description PC 26C 26#20 PIN RECP
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE] ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

File Size 97.76K  /  8 Page

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    STP60NE03L-12 6077

ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
Part No. STP60NE03L-12 6077
OCR Text ...URCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A V GS = 0 55 0...
Description N-CHANNEL Power MOSFET
N - CHANNEL 30V - 0.009 ohm - 60A - T0-220 STripFET POWER MOSFET -通道30V 0.009欧姆-0A T0 220 STripFET功率MOSFET
From old datasheet system
N - CHANNEL 30V - 0.009 - 60A - T0-220 STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.009 Ohms - 60A - T0-220 STripFET POWER MOSFET

File Size 84.41K  /  8 Page

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    STB11NB40 5418

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. STB11NB40 5418
OCR Text ...RCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 10.7 A V GS = 0 40...
Description N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的(不适用沟道增强模式MOSFET的)
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
From old datasheet system

File Size 101.13K  /  9 Page

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    STB20NE06L 6517

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. STB20NE06L 6517
OCR Text ...URCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 20 A V GS = 0 65 1...
Description N - CHANNEL 60V - 0.06ohm - 20A TO-263 STripFET] POWER MOSFET -通道60V 0.06ohm - 20A 263 STripFET]功率MOSFET
N - CHANNEL 60V - 0.06ohm - 20A TO-263 STripFET] POWER MOSFET
From old datasheet system

File Size 83.12K  /  8 Page

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    STB20NE06 6700

STMICROELECTRONICS[STMicroelectronics]
Part No. STB20NE06 6700
OCR Text ...URCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 20 A V GS = 0 50 1...
Description From old datasheet system
N - CHANNEL 60V - 0.06ohm - 20A D2PAK STripFET] POWER MOSFET

File Size 83.96K  /  8 Page

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    STB22NE03L 6591

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. STB22NE03L 6591
OCR Text ...URCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 22 A V GS = 0 40 4...
Description N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET -通道30V 0.034ohm - 22A条,263 STripFET]功率MOSFET
From old datasheet system

File Size 48.68K  /  6 Page

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    STB45N10L 4857

STMICROELECTRONICS[STMicroelectronics]
Part No. STB45N10L 4857
OCR Text ...URCE DRAIN DIODE Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 45 A I SD = 45 A V...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 86.46K  /  6 Page

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    STB80NE06-10 5631 -STB80NE06-10 STB80NE06-10T4

STMicroelectronics
Part No. STB80NE06-10 5631 -STB80NE06-10 STB80NE06-10T4
OCR Text ...RCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 80 A V GS = 0 100 ...
Description TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 80A I(D) | TO-263AB
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

File Size 93.44K  /  8 Page

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For sdm. Found Datasheets File :: 1758    Search Time::1.234ms    
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