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Advanced Power Technolo...
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| Part No. |
APT15DQ100BCT APT15DQ100BCTG
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| OCR Text |
...al characteristics symbol v f i rm c t unit volts a pf min typ max 2.5 3.0 3.06 1.92 100 500 12 characteristic / test conditions forward voltage maximum reverse leakage current junction capac... |
| Description |
ULTRAFAST SOFT RECOVERY RECTiFiER DiODE
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| File Size |
122.20K /
4 Page |
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ST Microelectronics
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| Part No. |
STTH5R06DJF STTH5R06DJF-TR
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| OCR Text |
... v di f /dt = - 50 a/s 40 55 i rm reverse recovery current t j = 125 c i f = 5 a, di f /dt = - 200 a/s, v r = 400 v 6.0 8.0 a s factor reverse recovery softness factor 0.5 - q rr reverse recovery charges 180 nc table 6. turn-on switch... |
| Description |
Ultrafast recovery diode high efficiency
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| File Size |
160.21K /
9 Page |
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ST Microelectronics
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| Part No. |
STTH30R02DJF STTH30R02DJF-TR
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| OCR Text |
...30 v di f /dt = 50 a/s 38 50 i rm reverse recovery current t j = 125 c i f = 30 a, di f /dt = - 200 a/s, v cc = 160 v 6.0 8.0 a s factor reverse recovery softness factor 0.3 - q rr reverse recovery charges 140 nc table 6. turn-on swit... |
| Description |
Ultrafast recovery diode high efficiency
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| File Size |
160.73K /
9 Page |
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ST Microelectronics
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| Part No. |
HDMi05-CL01F3
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| OCR Text |
...x. unit v br i r = 1 ma 14 v i rm v rm = 3 v per line 50 200 na r 1 , r 2 1575 1750 1925 r 3 80 100 120 k c line v line = 0 v, v osc = 30 mv, f = 1 mhz (measured under zero light conditions, b2 and c2 bumps connect together) 81012pf ... |
| Description |
5-line signal conditioning and ESD protection for HDMi interfaces
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| File Size |
254.52K /
8 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF5B65M2
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| OCR Text |
...r - 173 - ns q rr - 0.27 - c i rm - 3.5 - a t d(on) - 7 - ns t r - 14 - ns t d(off) - 127 - ns t f - 30 - ns e on - 0.09 - mj e off - 0.12 - mj e total - 0.21 - mj t rr - 273 - ns q rr - 0.48 - c i rm - 4.4 - a this product has been desig... |
| Description |
iGBT with Anti-Parallel Diode iGBTs
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| File Size |
563.84K /
9 Page |
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it Online |
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Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
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| Part No. |
iDT71V2577YS75BQi iDT71V2577YS75BGi iDT71V2579S85BG iDT71V2579S75BGi iDT71V2579SA75BGi iDT71V2579S85BGi iDT71V2579S80BGi iDT71V2577YS80PFi iDT71V2577YS75PFi iDT71V2577YSA75PF iDT71V2577YSA85PF iDT71V2577YS85PFi iDT71V2577YSA80PFi iDT71V2577YSA85PFi iDT71V2577YSA75PFi iDT71V2579SA80PFi iDT71V2577SA75BG iDT71V2579YSA75BG iDT71V2579YSA80BQi iDT71V2579S85BQi
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| OCR Text |
...l & industrial values unit v te rm (2) terminal voltage with respect to gnd -0.5 to +4.6 v v te rm (3,6) terminal voltage with respect to gn...i out dc output current 50 ma 48 77 tb l 03 grade temperature (1) v ss v dd v ddq commercial 0c to +... |
| Description |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V i/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V i/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K的x 36256亩18 3.3同步SRAM.5Vi / O的流量通过输出脉冲计数器，单周期取
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V i/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V i/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V i/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V i/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V i/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
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| File Size |
296.56K /
22 Page |
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ST Microelectronics
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| Part No. |
STTH3R02RL STTH3R02S
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| OCR Text |
... r = 30 v, t j = 25 c 16 20 i rm reverse recovery current i f = 3 a, di f /dt = -200 a/s, v r = 160 v, t j = 125 c 3.5 4.5 a t fr forward recovery time i f = 3 a, di f /dt = 100 a/s v fr = 1.1 x v fmax , t j = 25 c 40 ns v fp forwar... |
| Description |
Ultrafast recovery diode
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| File Size |
134.79K /
9 Page |
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it Online |
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Shindengen Electric Mfg...
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| Part No. |
SF8L60
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| OCR Text |
...50 ?? maximum reverse voltage v rm 600 v average rectified forward current i o 50hz sine wave, r-load, tc=118?? 8 a peak surge forward current i fsm 50hz sine wave, non-repetitive 1 cycle peak value, tj=25?? 170 a dielectric strength vdis t... |
| Description |
Super Fast Recovery Rectifiers(600V 8A)
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| File Size |
226.42K /
6 Page |
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it Online |
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Sanken
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| Part No. |
SFPB-59
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| OCR Text |
... and over package part number v rm (v) i f (av) ( a ) i fsm ( a ) 50hz half-cycle sinewave single shot v f (v) i f ( a ) i r (ma) i r (h) (ma) v r = v rm max v r = v rm max tj ( c) tstg ( c) ta ( c) max mass (g) surface mount axial... |
| Description |
Schottky Barrier Diode - 90V/100V
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| File Size |
70.82K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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