| |
|
 |
ONSEMI[ON Semiconductor]
|
| Part No. |
MGY25N120_D ON1934 MGY25N120
|
| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
... |
| Description |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCuIT RATED
From old datasheet system
|
| File Size |
149.81K /
5 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
ONSEMI[ON Semiconductor]
|
| Part No. |
MGP20N60u_D ON1866 MGP20N60u ON1865
|
| OCR Text |
... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
... |
| Description |
IGBT IN TO-220 20 A @ 90 31 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
|
| File Size |
116.77K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
APT50M65LLL APT50M65B2LL APT50M65B2LL_04 APT50M65B2LL04
|
| OCR Text |
...= 15V VDD = 250V ID = 67A @ 25C RG = 0.6 6 INDuCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 67A, RG = 3 6 INDuCTIVE SWITCHING @ 125C VDD...141 40 70 12 28 29 30 1035 845 1556 1013 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller ") Ch... |
| Description |
POWER MOS 7 R MOSFET
|
| File Size |
97.88K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
ONSEMI[ON Semiconductor]
|
| Part No. |
MGW20N120_D ON1922 MGW20N120
|
| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
... |
| Description |
Insulated Gate Bipolar Transistor
From old datasheet system
IGBT IN TO-47 20 A @ 90 28 A @ 25 1200 VOLTS
|
| File Size |
135.63K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
ONSEMI[ON Semiconductor]
|
| Part No. |
MGP11N60E_D ON1851 MGP11N60E ON1848
|
| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
... |
| Description |
From old datasheet system
IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
SHORT CIRCuIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
| File Size |
116.41K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
