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For parameter Found Datasheets File :: 286140 Search Time::2.656ms
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				Vishay Siliconix
Part No.	SI4904DY
OCR Text	... = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 16 continuous drain current (t j = 150 c) t c = 25 c i d 8 a t c = 70 c 8 t a = 25 c 8 b, c t a = 70 c 6.5 b, c pu...
Description	Dual N-Channel 40-V MOSFET
File Size	304.72K / 10 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SI9105DW-T1-E3 SI9105DJ02-E3 SI9105DN02-E3 SI9105DN02-T1 SI9105DN02-T1-E3
OCR Text	...ity. absolute maximum ratings parameter limit unit voltages referenced to - v in (v cc < + v in + 0.3 v) v cc 15 v +v in 120 v ds 200 i d (peak) (300 s pulse, 2 % duty cycle) 2 a i d (rms) 250 ma logic inputs (reset, shutdown , osc...
Description	1-W High-Voltage Switchmode Regulator
File Size	303.40K / 11 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SIB455EDK-T1-GE3
OCR Text	... = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 12 v gate-source voltage v gs 10 continuous drain current (t j = 150 c) t c = 25 c i d - 9 a a t c = 70 c - 9 a t a = 25 c - 7.8 b, c t a = 70 ...
Description	P-Channel 12-V (D-S) MOSFET
File Size	136.56K / 7 Page	View it Online	Download Datasheet

				Emulation Technology, Inc. Yageo, Corp. Rectron Semiconductor
Part No.	CAT25C16YA-GT3 CAT25C16YA-1.8-GT3 CAT25C16VE-GT3 CAT25C16LE-1.8-GT3
OCR Text	...ut shorted at a time. (3) these parameter are tested initially and after a design or process change that affects the parameter according to appropriat e aec-q100 and jedec test methods. (4) latch-up protection is provided for stresses up to...
Description	8K/16K SPI Serial CMOS EEPROM 8K/16K SPI串行EEPROM中的CMOS
File Size	539.34K / 16 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	CAT24C64ZD2E-GT2
OCR Text	...lity characteristics (3) symbol parameter min units n end (4) endurance 1,000,000 program/ erase cycles t dr data retention 100 years d.c. operating characteristics v cc = 1.8 v to 5.5 v, t a = -40c to 125c, unless otherwise speci?ed. s...
Description	8K X 8 I2C/2-WIRE SERIAL EEPROM, DSO8 3 X 4.90 MM, GREEN, MO-229, TDFN-8
File Size	587.47K / 18 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SIB457EDK-T1-GE3
OCR Text	... = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 9 a a t c = 70 c - 9 a t a = 25 c - 6.8 b, c t a = 70 c...
Description	P-Channel 20-V (D-S) MOSFET
File Size	231.75K / 9 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	CAT24C256ZD2I-GT2
OCR Text	...it y characteristics (3) symbol parameter min units n end (4) endurance ,000,000 program/ erase cycles t dr data retention 00 years d.c. operati ng characteristics v cc = .8 v to 5.5 v, t a = -40c to 85c, unless otherwise specifed. ...
Description	32K X 8 I2C/2-WIRE SERIAL EEPROM, DSO8 3 X 4.90 MM, GREEN, MO-229, TDFN-8
File Size	645.88K / 17 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SIB900EDK-T1-GE3
OCR Text	... = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 6 continuous drain current (t j = 150 c) t c = 25 c i d 1.5 a a t c = 70 c 1.5 a t a = 25 c 1.5 a, b, c t a = 70 c 1...
Description	Dual N-Channel 20-V (D-S) MOSFET
File Size	226.17K / 9 Page	View it Online	Download Datasheet

				Vishay Intertechnology, Inc.
Part No.	SIF902EDZ-T1-E3
OCR Text	... 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current (t j = 150 c) a t a = 25 c i d 10.3 7.0 c on ti nuous d ra i n c ...
Description	7 A, 20 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 2 X 5, LEAD FREE, PowerPAK-6
File Size	93.43K / 6 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
Part No.	2SB631 2SB631K 2SD600 2SD600K
OCR Text	...te Maximum Ratings at Ta = 25C parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO ...
Description	NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications 100V/120V/ 1A Low-Frequency Power Amplifier Applications 100V/120V/ 1A Low-Frequency Power Amp Applications PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体
File Size	114.39K / 4 Page	View it Online	Download Datasheet

For parameter Found Datasheets File :: 286140 Search Time::2.656ms
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