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IXYS, Corp. IXYS[IXYS Corporation]
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Part No. |
IRFP460
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Description |
n-channel enhancement mode MegamoS power moSFET(最大漏源击穿电00V,导通电.27Ω的N沟道增强MegamoS功率moSFET) 20 A, 500 V, 0.27 ohm, n-chANNEL, Si, power, moSFET, TO-247AD n-channel enhancement mode MegamoS power moSFET(最大漏源击穿电00V,导通电.27Ω的N沟道增强B>MegamoS功率moSFET) MegamoS - power moSFET
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File Size |
75.82K /
4 Page |
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it Online |
Download Datasheet |
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STW80N06-10 4868
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Description |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL enhancement mode "ULTRA HIGH DENSITY" power moS TRANSISTOR From old datasheet system N - CHANNEL enhancement mode ULTRA HIGH DENSITY power moS TRANSISTOR
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File Size |
56.71K /
5 Page |
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it Online |
Download Datasheet |
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Vishay Intertechnology,Inc.
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Part No. |
BS250 70209
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Description |
P-Channel enhancement-mode moSFET Transistor(最小漏源击穿电45V,夹断电0.18A的P沟道增强型moSFET晶体 From old datasheet system P-Ch enhancement-mode moSFET Transistors
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File Size |
94.52K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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