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  junctions Datasheet PDF File

For junctions Found Datasheets File :: 2210    Search Time::2.625ms    
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    SGA-4386

List of Unclassifed Manufacturers
ETC[ETC]
Part No. SGA-4386
OCR Text ...nimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 45mA , the SGA4386 typically provides +28.9 dBm output IP3, 17 dB of gain,...
Description DC-4500 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER

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    SGA-4463

STANFORD[Stanford Microdevices]
Part No. SGA-4463
OCR Text ...nimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 45mA , the SGA4463 typically provides +27 dBm output IP3, 19 dB of gain, a...
Description DC-3500 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER 直流- 3500兆赫级联硅锗HBT MMIC放大

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    V18AUMLA2220 V18AUMLA12 V18AUMLA1206 AUML V18AUMLA1210 V18AUMLA1812

Littelfuse, Inc.
LITTELFUSE[Littelfuse]
Part No. V18AUMLA2220 V18AUMLA12 V18AUMLA1206 AUML V18AUMLA1210 V18AUMLA1812
OCR Text ...semiconductor devices (i.e. P-N junctions). The apparent slow response time often associated with transient voltage suppressors (Zeners, MOVs) is often due to parasitic inductance in the package and leads of the device and less dependent of...
Description Multilayer Transient Voltage Surge Suppressor

File Size 426.82K  /  9 Page

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    IH401A

Intersil Corporation
Part No. IH401A
OCR Text ...source-to-gate or drain-to-gate junctions of the JFET when used in switching applications. Previous applications of JFETs required the addition of diodes, in series with the gate, and then perhaps a gate-tosource referral resistor or a capa...
Description QUAD Varafet Analog Switch

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    K1400E70 K1400G K1400S K1500G K2200E70 K2200F1 K2200G K2200S K1100E70 K1100G K1100S K1200E70 K1200G K1200S K1050E70 K250

TECCOR[Teccor Electronics]
TE Connectivity, Ltd.
Part No. K1400E70 K1400G K1400S K1500G K2200E70 K2200F1 K2200G K2200S K1100E70 K1100G K1100S K1200E70 K1200G K1200S K1050E70 K2500F1 K2401F1 K2400E70 K2400F1 K2400G K2400S SIDAC K1050G K1050S K1300E70 K1300G K1300S K1500E70 K1500S K2000E70 K2000F1 K2000G K2000S K2500E70 K2500G K2500S K3000F1 K1500
OCR Text ...Sidacs feature glass passivated junctions to ensure a rugged and dependable device capable of withstanding harsh environments. Variations of devices covered in this data sheet are available for custom design applications. Please consult the...
Description Thyristor Product Catalog
Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 16x31.5 mm; Packaging: Bulk
silicon bilateral voltage triggered switch 硅双边电压触发开

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    CD4099 CD4106 CD4104 CD4107 CD4112 CD4125 CD4100 CD4131 CD4124 CD4120 CD4111 CD4116 CD4110 CD4127 CD4134 CD4135 CD4102 C

Compensated Deuices Inc...
Alpha
CDI-DIODE[Compensated Deuices Incorporated]
Part No. CD4099 CD4106 CD4104 CD4107 CD4112 CD4125 CD4100 CD4131 CD4124 CD4120 CD4111 CD4116 CD4110 CD4127 CD4134 CD4135 CD4102 CD4128 CD4119 CD4118 CD4103 CD4101 CD4130 CD4132 CD4133 CD4122 CD4129 CD4113 CD4117 CD4126 CD4121 CD4123 CD4114 CD4115 CD4105 CD4108 CD4109
OCR Text junctions COMPLETELY PROTECTED WITH SILICON DIOXIDE * 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING * ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135 * COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER RE...
Description surface mount silicon Zener diodes 表面贴装硅稳压二极管
ZENER DIODE CHIPS

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    EL2001ACN EL2001C EL2001CM EL2001CN

ELANTEC[Elantec Semiconductor]
Part No. EL2001ACN EL2001C EL2001CM EL2001CN
OCR Text ...ect the transistor base emitter junctions and limit the boost current during slew to avoid saturation of internal transistors The diodes begin conduction at about g2 5V input to output differential When that happens the input resistance dro...
Description Low Power, 70 MHz Buffer Amplifier

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    SMCJ6036 SMCJ6036A SMCJ6037 SMCJ6037A SMCJ6038 SMCJ6038A SMCJ6039 SMCJ6039A SMCJ6040 SMCJ6040A SMCJ6041 SMCJ6041A SMCJ60

MICROSEMI CORP-SCOTTSDALE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. SMCJ6036 SMCJ6036A SMCJ6037 SMCJ6037A SMCJ6038 SMCJ6038A SMCJ6039 SMCJ6039A SMCJ6040 SMCJ6040A SMCJ6041 SMCJ6041A SMCJ6042 SMCJ6042A SMCJ6043 SMCJ6043A SMCJ6044 SMCJ6044A SMCJ6045 SMCJ6045A SMCJ6046 SMCJ6046A SMCJ6047 SMCJ6047A SMCJ6048 SMCJ6048A SMCJ6049 SMCJ6049A SMCJ6050 SMCJ6050A SMCJ6051 SMCJ6051A SMCJ6052 SMCJ6052A SMCJ6053 SMCJ6053A SMCJ6054 SMCJ6054A SMCJ6055 SMCJ6055A SMCJ6056 SMCJ6056A SMCJ6057 SMCJ6057A SMCJ6058 SMCJ6058A SMCJ6059 SMCJ6059A SMCJ6060 SMCJ6060A SMCJ6061 SMCJ6061A SMCJ6062 SMCJ6062A SMCJ6063 SMCJ6063A SMCJ6064 SMCJ6064A SMCJ6065 SMCJ6065A SMCJ6066 SMCJ6066A SMCJ6067 SMCJ6067A SMCJ6068 SMCJ6068A SMCJ6069 SMCJ6069A SMCJ6070 SMCJ6070A SMCJ6071 SMCJ6071A SMCJ6072 SMCJ6072A SMCG_J6072A SMCG6059 SMCG6059A SMCG6060 SMCG6060A SMCG6056 SMCG6056A SMCGJ6036 SMCG6050A SMCG6051A SMCG6053A SMCG6054 SMCG6055A SMCG6057A SMCG6048A MSC1364 SMCG6036 SMCG6036A SMCG6037 SMCG6037A SMCG6038 SMCG6038A SMCG6039 SMCG6039A SMCG6040 SMCG6040A SMCG6041 SMCG6041A SMCG6042 SMCG6042A SMCG6043A SMCG6044 SMCG6044A SMCG6045 SMCG6045A SMCG6046 SMCG6046A SMCG6047 SMCG6047A SMCG6048 SMCG6049 SMCG6049A SMCG6050 SMCG6051 SMCG6052 SMCG6052A SMCG6053 SMCG6054A SMCG6055 SMCG6057 SMCG6058 SMCG6058A S
OCR Text ...ufactured using two silicon PN, junctions in a back to back configuration. They are characterized by their high surge capability, fast response time, and low impedance, (Ron) for clamping surge. The SMC series, rated for 1500 watts during a...
Description CMOS Triple 3-Input NAND Gate 14-PDIP -55 to 125 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
CMOS Dual 4-Input OR Gate 14-TSSOP -55 to 125 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
CMOS Triple 3-Input NAND Gate 14-CDIP -55 to 125 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
From old datasheet system

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    SMDA15C-8 SMDA12C-8 SMDA05C-8 SMDA24C-8

GE Security, Inc.
GE[General Semiconductor]
Part No. SMDA15C-8 SMDA12C-8 SMDA05C-8 SMDA24C-8
OCR Text ...-4-2 (IEC801-2) Monolithic TVS junctions 0.337(8.55) 0.344(8.75) 14 8 0.150(3.80) 0.157(4.00) 0.228(5.80) 0.244(6.20) 300W peak pulse power surge capability Excellent clamping capability Protection of up to eight data lines ...
Description Surface Mount Diode Array Transient Voltage Supperssor(琛ㄨ创???????靛?????靛??????
SURFACE MOUNT DIODE ARRAY TRANSIENT VOLTAGE SUPPRESSOR

File Size 39.71K  /  2 Page

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    AD647K AD647KH AD647J AD647JH AD647L AD647LH AD647 AD647SH AD647S AD647SE AD647SE_883BH

AD[Analog Devices]
Part No. AD647K AD647KH AD647J AD647JH AD647L AD647LH AD647 AD647SH AD647S AD647SE AD647SE_883BH
OCR Text ...ccomplished by the base-emitter junctions of the dual transistor Q1. Assuming Q1 has > 100, which is the case for the specified transistor, the base-emitter voltage on side 1 is to a close approximation VBE A = kT/q ln I1/IS1 This circuit ...
Description Ultralow Drift/ Dual BiFET Op Amp
Ultralow Drift, Dual BiFET Op Amp

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For junctions Found Datasheets File :: 2210    Search Time::2.625ms    
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