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  isoplus247 Datasheet PDF File

For isoplus247 Found Datasheets File :: 81    Search Time::1.812ms    
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    IXFC30N60P

IXYS Corporation
Part No. IXFC30N60P
OCR Text .....25 n/lb weight isoplus220 2 g isoplus247 5 g ixfc 30n60p ixfr 30n60p electrically isolated back surface g = gate d = drain s = source features
Description PolarHV HiPerFET Power MOSFET

File Size 131.22K  /  4 Page

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    IXGR32N60C

IXYS Corporation
Part No. IXGR32N60C
OCR Text ...fast tm igbt lightspeed series isoplus247 tm package (electrically isolated back side) g = gate, c = collector, e = emitter * patent pending isoplus 247 tm e153432 g c e isolated backside* features  dcb isolated mounting tab  meets ...
Description Lightspeed Series HiPerFAST IGBT(Lightspeed系列,VCES00V,VCE(sat).1V的HiPerFAST绝缘栅双极晶体管)

File Size 100.33K  /  4 Page

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    IXYS
Part No. IXGR60N60B2
OCR Text ...chnical data hiperfast tm igbt isoplus247 tm b2-class high speed igbts (electrically isolated back surface) ixgr 60n60b2 ixgr 60n60b2d1 plus247(ixgr) (isolated tab) features
Description HiPerFAST IGBT isoplus247

File Size 627.33K  /  6 Page

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    IXER60N12006

IXYS Corporation
Part No. IXER60N12006
OCR Text ... = 0.32 j/k; r th2 = 0.27 k/w isoplus247 tm outline the convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side this drawing will meet all dimensions requirement of jedec outline to-247 ad except screw ...
Description NPT3 IGBT in ISOPLUS 247

File Size 154.08K  /  4 Page

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    IXGR60N60C3C1

IXYS Corporation
Part No. IXGR60N60C3C1
OCR Text ... ns ns mJ ns ns mJ 0.73 C/W C/W isoplus247 (IXGR) Outline Reverse Diode (SiC) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VF RthJC IF = 20A, VGE = 0V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1.65 1.80 2.10...
Description GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

File Size 189.43K  /  6 Page

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    IXYS[IXYS Corporation]
Part No. IXKR40N60C IXKR40N60
OCR Text ...p. max. 70 m 3.5 60 5.5 V q isoplus247 package with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip o...
Description CoolMOS Power MOSFET in isoplus247 Package

File Size 44.96K  /  2 Page

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    IXFR24N90P

IXYS Corporation
Part No. IXFR24N90P
OCR Text ... 460 m isolated tab isoplus247 e153432 ixfr24n90p polar tm power mosfet hiperfet tm fearures
Description Polar Power MOSFET HiPerFET

File Size 110.96K  /  4 Page

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    IXFR30N60P

IXYS Corporation
Part No. IXFR30N60P
OCR Text .....25 n/lb weight isoplus220 2 g isoplus247 5 g ixfc 30n60p ixfr 30n60p electrically isolated back surface g = gate d = drain s = source features
Description PolarHV HiPerFET Power MOSFET

File Size 150.36K  /  4 Page

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    IXFR44N50Q03

IXYS Corporation
Part No. IXFR44N50Q03
OCR Text ...47 tm hiperfet tm power mosfets isoplus247 tm , q-class (electrically isolated backside) n-channel enhancement mode avalanche rated, low q g , high dv/dt features
Description HiPerFET Power MOSFETs isoplus247, Q-Class

File Size 531.31K  /  4 Page

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