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Fairchild Semiconductor Corporation
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Part No. |
FDMS86322
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OCR Text |
...DS(on) = 7.65 m: at VGS = 10 V, ID = 13 A Max rDS(on) = 12 m: at VGS = 6 V, ID = 7.2 A Advanced Package and Silicon combination for low rD...1 S S D S G D D D D D D D 5 6 7 8 4 3 2 1 G S S S
Power 56
MOSFET Maximum Ratings TA = 25 C un... |
Description |
N-Channel PowerTrench? MOSFET 80 V, 60 A, 7.65 m
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File Size |
212.94K /
7 Page |
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it Online |
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Fairchild Semiconductor Corporation
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Part No. |
FDMC510P
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OCR Text |
...DS(on) = 8.0 m at VGS = -4.5 V, ID = -12 A Max rDS(on) = 9.8 m at VGS = -2.5 V, ID = -10 A Max rDS(on) = 13 m at VGS = -1.8 V, ID = -9.3 A Max rDS(on) = 17 m at VGS = -1.5 V, ID = -8.3 A High performance trench technology for extremely low ... |
Description |
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File Size |
301.03K /
7 Page |
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it Online |
Download Datasheet |
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Hi-Sincerity Mocroelectronics Corp. HSMC[Hi-Sincerity Mocroelectronics]
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Part No. |
H01N60S H01N60SJ H01N60SI
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OCR Text |
...te Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt VGS PD Tj, Tstg TL Drain-Source Voltage Drain Current (Continuous TC=25oC) Drai...1.1A, VDD=50V, RG=25, Starting TJ=25C) Avalanche Current *1 Repetitive Avalanche Energy Peak Diode R... |
Description |
N-Channel Power Field Effect Transistor
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File Size |
58.77K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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